Semiconductor Wafer Composed Of Monocrystalline Silicon And Method For Producing It

Abstract

The invention relates to a semiconductor wafer of monocrystalline silicon, and to a method for producing it. The semiconductor wafer has a zone, DZ, which is free of BMD defects and extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer, and a region having BMD defects which extends from the DZ further into the bulk of the semiconductor wafer. A silicon single crystal is pulled by the Czochralski method and processed to form a polished monocrystalline silicon substrate wafer. The substrate wafer is treated by rapidly heating and cooling the substrate wafer, slowly heating the rapidly heated and cooled substrate wafer, and keeping the substrate wafer at a specific temperature and over a specific period.

What is claimed is: 
     
         1 . A monocrystalline silicon semiconductor wafer having a nitrogen concentration of not more than 1×10 12  atoms/cm 3 , and when subjected to defect delineation/optical microscopy comprises:
 a denuded zone (“DZ”) which extends from a front side of the semiconductor wafer into the bulk of the semiconductor wafer and which is free of BMD defects and has an averaged thickness of not less than 5 μm, and a region which adjoins the DZ and extends further into the bulk of the semiconductor wafer, the region having BMD defects having a size of not less than 50 nm, wherein a depth profile of the BMD defects in the region has a local maximum which is at a distance of not less than 20 μm and not more than 200 μm from the front side of the semiconductor wafer, and wherein the density of the BMD defects at the local maximum is not less than 2×10 10 /cm 3 . 
 
     
     
         2 . The wafer of  claim 1 , wherein the interstitial oxygen concentration is ≧5.2·10 17  atoms/cm 3  and ≦6.0·10 17  atoms/cm 3 . 
     
     
         3 . The wafer of  claim 1 , which has a COP-containing region extending from the center of the wafer in a direction towards the edge of the wafer which has an average density of COP defects having a size of >20 nm of <2.5·10 5  cm −3 . 
     
     
         4 . The wafer of  claim 1 , having an COP-containing region extending from the center of the wafer in a direction towards the edge of the wafer which has COP defects having a size of >20 nm, and an adjoining N region which extends from the COP-containing region towards the wafer edge, the average COP density from the center of the wafer to an outer boundary of the N region being <2.5·10 5  cm −3 . 
     
     
         5 . The wafer of  claim 1 , wherein BMD defects having a size of ≧50 nm are present at a concentration of ≧2·10 10  cm −3 . 
     
     
         6 . The wafer of  claim 1 , wherein BMD defects having a size of ≧75 nm are present at a concentration of ≧2·10 10  cm −3 . 
     
     
         7 . A method for producing a monocrystalline silicon semiconductor wafer of  claim 1  having a denuded zone (“DZ”) which is free of BMD defects, and having a region having BMD defects which adjoins the DZ, comprising:
 a) pulling a silicon single crystal by the Czochralski method; 
 b) processing the single crystal to form a polished monocrystalline substrate wafer which, from a center as far as an edge, consists of an N region or has COP defects, the size of the COP defects being more than 20 nm and having an average density of less than 2.5×10 5 /cm 3 , the substrate wafer having a nitrogen concentration of not more than 1×10 12  atoms/cm 3  and an oxygen concentration of not less than 5.2×10 17  atoms/cm 3  and not more than 6.0×10 17  atoms/cm 3 ; 
 c) rapidly heating and cooling the substrate wafer in an atmosphere which substantially consists of NH 3  and argon in a volume ratio of not less than 1:25 and not more than 1:5 to a temperature of not less than 1165° C. and not more than 1180° C. and with a heating rate and a cooling rate of not less than 30 K/s and not more than 50 K/s; 
 d) slowly heating the rapidly heated and cooled substrate wafer from step c) from a temperature of not less than 500° C. and not more than 550° C. to a temperature of not less than 930° C. and not more than 1000° C. with a heating rate of not less than 0.5 K/min and not more than 1.5 K/min; and 
 e) keeping the substrate wafer at the temperature of not less than 930° C. and not more than 1000° C. over a period of not less than 7 hours and not more than 10 hours. 
 
     
     
         8 . The method of  claim 1 , wherein the method comprises no additional thermal treatments of the substrate wafer which subject the substrate wafer to temperatures of more than 1000° C.