Display device and method of manufacturing the same

Abstract

A display device and a method of manufacturing the display device are provided. Moisture may be prevented from penetrating into the display device. The display device includes a substrate including a pixel area. A thin film transistor is formed on the substrate. A pixel electrode is connected to the thin film transistor and formed in the pixel area. A roof layer is formed on the pixel electrode. The roof layer is separated from the pixel electrode via a microcavity. A liquid crystal layer fills the microcavity. A liquid crystal injection hole is formed in the roof layer and exposes a portion of the microcavity. An encapsulation layer is formed on the roof layer. The encapsulation layer covers the liquid crystal injection hole and seals the microcavity for the pixel area. The encapsulation layer includes a multilayer structure.

What is claimed is: 
     
         1 . A display device comprising:
 a substrate;   a thin film transistor disposed on the substrate;   a pixel electrode connected to the thin film transistor;   a roof layer disposed on the pixel electrode to be spaced apart from the pixel electrode by   a plurality of microcavities therebetween;   a liquid crystal layer disposed in the plurality of microcavities; and   an encapsulation layer disposed on the roof layer,   wherein the encapsulation layer includes a first sub-encapsulation layer and a second sub-encapsulation layer, and the first sub-encapsulation layer is interposed between the second sub-encapsulation layer and the roof layer.   
     
     
         2 . The display device of  claim 1 , wherein a portion of the first sub-encapsulation layer is interposed between the second sub-encapsulation layer and the roof layer. 
     
     
         3 . The display device of  claim 1 , wherein the first sub-encapsulation layer includes an inorganic material, and the second sub-encapsulation layer includes an organic insulating material. 
     
     
         4 . The display device of  claim 3 , wherein the first sub-encapsulation layer includes a silicon oxide (SiOx) or a silicon nitride (SiNx). 
     
     
         5 . The display device of  claim 3 , wherein the second sub-encapsulation layer includes perylene, silicone, or an ultra violet (UV) sheet. 
     
     
         6 . The display device of  claim 3 , wherein the first sub-encapsulation layer has a thickness in a range of from about 20 nm to about 50 nm. 
     
     
         7 . The display device of  claim 3 , wherein the second sub-encapsulation layer has a thickness in a range of from about 0.5 μm to about 1 μm. 
     
     
         8 . The display device of  claim 3 , wherein the encapsulation layer further includes a third sub-encapsulation layer including a metal oxide. 
     
     
         9 . The display device of  claim 8 , wherein the third sub-encapsulation layer includes aluminum oxide (Al 2 O 3 ). 
     
     
         10 . The display device of  claim 8 , wherein the third sub-encapsulation layer is disposed on the second sub-encapsulation layer or between the first sub-encapsulation layer and the second sub-encapsulation layer. 
     
     
         11 . The display device of  claim 1 , further comprising a self-assembled monolayer (SAM) formed on the encapsulation layer. 
     
     
         12 . The display device of  claim 1 , further comprising a buffer layer formed on the encapsulation layer, the buffer layer including an organic insulating material. 
     
     
         13 . The display device of  claim 1 , further comprising a polarizer disposed on the encapsulation layer. 
     
     
         14 . The display device of  claim 1 , further comprising a light blocking member disposed on the thin film transistor. 
     
     
         15 . The display device of  claim 1 , wherein the light blocking member is disposed between the thin film transistor and the encapsulation layer. 
     
     
         16 . The display device of  claim 14 , the light blocking member is disposed between a data line connected the thin film transistor and the roof layer.