Connection arrangement of an electric and/or electronic component
Abstract
A connection arrangement includes at least one electric and/or electronic component. The at least one electric and/or electronic component has at least one connection face, which is connected in a bonded manner to a join partner by means of a connection layer. The connection layer can for example be an adhesive, soldered, welded, sintered connection or another known connection that connects joining partners while forming a material connection. Furthermore, a reinforcement layer is arranged adjacent to the connection layer in a bonded manner. The reinforcement layer has a higher modulus of elasticity than the connection layer. A particularly good protective effect is achieved if the reinforcement layer is formed in a frame-like manner by an outer and an inner boundary and, at least with the outer boundary thereof, encloses the connection face of the at least one electric and/or electronic component.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A connection arrangement ( 100 , 200 , 300 , 400 ) of at least one electric and/or electronic component ( 10 ), wherein the at least one electric and/or electronic component ( 10 ) has a connection face ( 11 ), which is connected in a bonded manner to the join partner ( 40 ) by a connection layer ( 20 ), wherein
a reinforcement layer ( 30 ′) is arranged adjacent to the connection layer ( 20 ), said reinforcement layer ( 30 ′) having a higher modulus of elasticity than the connection layer ( 20 ), wherein the reinforcement layer ( 30 ′) is formed in a frame-like manner by an outer boundary and an inner boundary ( 36 , 35 ) and, at least with the outer boundary ( 36 ) thereof, encloses the connection face ( 11 ) of the at least one electric and/or electronic component ( 10 ), and wherein the reinforcement layer ( 30 ′) comprises at least one intermetallic phase.
2 . The connection arrangement according to claim 1 , characterized in that the connection layer ( 20 ) comprises at least one metal and the reinforcement layer ( 30 ′) is formed from a soldering material ( 30 ), wherein, after a thermal treatment of at least one of the connection layer ( 20 ) and the soldering material ( 30 ), the reinforcement layer ( 30 ′) comprises at least one intermetallic phase.
3 . The connection arrangement ( 100 , 200 , 300 , 400 ) according to claim 2 , characterized in that the soldering material ( 30 ) contains tin, bismuth, zinc, gallium and/or aluminum.
4 . The connection arrangement ( 100 , 200 , 300 , 400 ) according to claim 2 , characterized in that the inner boundary ( 35 ) of the reinforcement layer ( 30 ′) extends to within the connection face ( 11 ) of the at least one electric and/or electronic component ( 10 ).
5 . The connection arrangement according to claim 4 , characterized in that the connection layer ( 20 ) has a surface region ( 21 ) which protrudes beyond the connection face ( 11 ), wherein the reinforcement layer ( 30 ′) is arranged on the connection layer ( 20 ) in said surface region ( 21 ) and/or the reinforcement layer ( 30 ′) delimits the lateral surface expansion of the connection layer ( 20 ) with the inner boundary ( 35 ) thereof.
6 . The connection arrangement ( 100 , 200 , 300 , 400 ) according to claim 5 , characterized in that the connection layer ( 20 ) is a metal layer containing tin, silver, copper, zinc, bismuth, gallium and/or aluminum.
7 . The connection arrangement ( 100 , 200 , 300 , 400 ) according to claim 6 , characterized in that the connection layer ( 20 ) is a silver sintered layer.
8 . The connection arrangement ( 100 , 200 , 300 , 400 ) according to claim 1 , characterized in that the inner boundary ( 35 ) of the reinforcement layer ( 30 ′) extends to within the connection face ( 11 ) of the at least one electric and/or electronic component ( 10 ).
9 . The connection arrangement according to claim 1 , characterized in that the connection layer ( 20 ) has a surface region ( 21 ) which protrudes beyond the connection face ( 11 ), wherein the reinforcement layer ( 30 ′) is arranged on the connection layer ( 20 ) in said surface region ( 21 ) and/or the reinforcement layer ( 30 ′) delimits the lateral surface expansion of the connection layer ( 20 ) with the inner boundary ( 35 ) thereof.
10 . The connection arrangement ( 100 , 200 , 300 , 400 ) according to claim 1 , characterized in that the connection layer ( 20 ) is a metal layer containing tin, silver, copper, zinc, bismuth, gallium and/or aluminum.
11 . The connection arrangement ( 100 , 200 , 300 , 400 ) according to claim 1 , characterized in that the connection layer ( 20 ) is a silver sintered layer.
12 . A composite element, comprising a connection layer ( 20 ), which contains at least one metal, and a solder layer ( 30 ) arranged adjacent to the connection layer ( 20 ),
characterized in that the solder layer ( 30 ) is formed in a frame-like manner by an outer boundary and an inner boundary ( 36 , 35 ) and is arranged on at least one of the connection layer ( 20 ) and the solder layer ( 30 ), with the inner boundary ( 35 ) thereof, delimits a lateral surface expansion of the connection layer ( 20 ), wherein the composite element is designed in such a way that, during a thermal treatment of at least one of the connection layer ( 20 ) and the solder layer ( 30 ), a reinforcement layer ( 30 ′) comprising at least one intermetallic phase is formed between the connection layer ( 20 ) and the solder layer ( 30 ), the reinforcement layer ( 30 ′) having a higher modulus of elasticity than the connection layer ( 20 ).
13 . The composite element according to claim 12 , characterized in that after the thermal treatment, at least the solder layer ( 30 ) is replaced by the reinforcement layer ( 30 ′).
14 . The composite element according to claim 13 , characterized in that the solder layer ( 30 ) contains tin, bismuth, zinc, gallium and/or aluminum, and/or the connection layer ( 20 ) is a silver sintered layer or a silver sintered molded part.
15 . The composite element according to claim 12 , characterized in that the solder layer ( 30 ) contains tin, bismuth, zinc, gallium and/or aluminum, and/or the connection layer ( 20 ) is a silver sintered layer or a silver sintered molded part.
16 . A joining method wherein a connection layer ( 20 ) is disposed between the connection face ( 11 ) of at least one electric and/or electronic component ( 10 ) and a join partner ( 40 ) in order to form a bonded connection, characterized in that a reinforcement layer ( 30 ′) is arranged adjacent to the connection layer ( 20 ), said reinforcement layer having a higher modulus of elasticity than the connection layer ( 20 ), wherein the reinforcement layer ( 30 ′) is formed in a frame-like manner by an outer boundary and an inner boundary ( 36 , 35 ) and the connection face ( 11 ) is enclosed by at least the outer boundary ( 36 ) of the reinforcement layer ( 30 ′),
characterized in that the connection layer ( 20 ) comprises at least one metal and the reinforcement layer ( 30 ′) is formed from a solder layer ( 30 ), wherein the solder layer ( 30 ) is formed in a frame-like manner by the outer boundary and the inner boundary ( 36 , 35 ) and is applied to a surface region ( 21 ) of the connection layer ( 20 ), said surface region protruding beyond the connection face ( 11 ), and the solder layer ( 30 ) is arranged such that said solder layer, with the inner boundary ( 35 ) thereof, delimits lateral surface expansion of the connection layer ( 20 ), and at least one of the connection layer ( 20 ) and the solder layer ( 30 ) are thermally treated and the reinforcement layer ( 30 ′) is formed between the connection layer ( 20 ) and the solder layer ( 30 ), wherein the formed reinforcement layer ( 30 ′) has a higher modulus of elasticity than the connection layer ( 20 ) and wherein at least the solder layer ( 30 ) is replaced by the formed reinforcement layer ( 30 ′).
17 . The joining method according to claim 16 , characterized in that the solder layer ( 30 ) is applied and/or disposed after the bonded connection of the at least one electric and/or electronic component ( 10 ) to the connection layer ( 20 ) has been formed.
18 . The joining method according to claim 17 , characterized in that the connection layer ( 20 ) is configured as a silver sintered layer or silver sintered molded part.
19 . The joining method according to claim 16 , characterized in that the solder layer ( 30 ) contains tin, bismuth, zinc, gallium and/or aluminum.
20 . The joining method according to claim 16 , characterized in that the connection layer ( 20 ) is configured as a sintered layer or sintered molded part.Join the waitlist — get patent alerts
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