Patterning of Nanostructures

Abstract

A technique for forming nanostructures including introducing a plurality of molecular-size scale and/or nanoscale building blocks to a region near a substrate and simultaneously scanning a pattern on the substrate with an energy beam, wherein the energy beam causes a change in at least one physical property of at least a portion of the building blocks, such that a probability of the portion of the building blocks adhering to the pattern scanned by the energy beam is increased, and wherein the building blocks adhere to the pattern to form the structure. The energy beam and at least a portion of the building blocks may interact by electrostatic interaction to form the structure.

What is claimed is: 
     
         1 . A method for forming a structure, the method comprising:
 creating a net charge pattern on a substrate by means of at least one first energy beam, the charge pattern having a first type of charge;   correcting an error in the charge pattern; and   introducing a plurality of at least one of molecular-size scale and nanoscale building blocks to a region proximate the corrected charge pattern, the building blocks having a second type of charge and directly imaging the corrected charge pattern to form the feature, the building blocks being introduced by dusting, such that the building blocks adhere only to the corrected charge pattern, wherein the error is corrected after the charge pattern is formed and before the plurality of building blocks is introduced.   
     
     
         2 . The method of  claim 1 , wherein correcting the error in the charge pattern comprises providing a feedback loop comparing a set of charge data to data corresponding to a desired charge pattern. 
     
     
         3 . The method of  claim 2 , wherein the error comprises a misplaced charge, and correcting the error comprises discharging the error with a second energy beam having the second type of charge. 
     
     
         4 . The method of  claim 2 , wherein the error comprises a missing charge in the charge pattern and correcting the error comprises adding a charge to the charge pattern with the first energy beam. 
     
     
         5 . The method of  claim 1 , wherein the charge pattern is formed with a plurality of energy beams. 
     
     
         6 . The method of  claim 1 , wherein the first energy beam is at least one of an ion beam, an electron beam, and a photon beam. 
     
     
         7 . The method of  claim 1 , wherein the building blocks are selected from the group consisting of ions, nanoclusters, nanoparticles, and organic molecules. 
     
     
         8 . The method of  claim 7 , wherein the building blocks comprise nanoclusters, and further comprising the step of globally sintering the nanoclusters together, forming the structure as a locally solid pattern delineated by the charge pattern. 
     
     
         9 . The method of  claim 1 , wherein the first type of charge comprises a positive charge and the second type of charge comprises a negative charge. 
     
     
         10 . The method of  claim 1 , wherein the first type of charge comprises a negative charge and the second type of charge comprises a positive charge. 
     
     
         11 . The method of  claim 1 , wherein the second type of charge comprises a neutral charge. 
     
     
         12 . A method for forming a structure, the method comprising:
 introducing a plurality of at least one of molecular-size scale and nanoscale building blocks onto a surface of a substrate to form the structure; and   correcting an error in the structure.   
     
     
         13 . The method of  claim 12 , wherein correcting the error in the structure comprises providing a feedback loop comparing a set of charge data to data corresponding to a desired structure. 
     
     
         14 . The method of  claim 12 , wherein correcting the error comprises performing an additive correction. 
     
     
         15 . The method of  claim 14 , wherein correcting the error comprises depositing a charge on the substrate and introducing at least one additional building block to a region proximate the charge. 
     
     
         16 . The method of  claim 12 , wherein correcting the error comprises performing a subtractive correction. 
     
     
         17 . The method of  claim 16 , wherein performing the subtractive correction comprises removing a portion of the structure. 
     
     
         18 . The method of  claim 17 , wherein removing the portion of the structure comprises removing the portion with an energy beam. 
     
     
         19 . The method of  claim 12 , further comprising the step of scanning a pattern on the substrate with an energy beam, wherein the energy beam causes a change in at least one physical property of at least a portion of the building blocks, such that a probability of the portion of the building blocks adhering to the pattern scanned by the energy beam is increased, and wherein the building blocks adhere to the pattern to form the structure. 
     
     
         20 . The method of  claim 19 , wherein the energy beam comprises at least one of an electron beam and an ion beam.