Zero-Dimensional Electron Devices and Methods of Fabricating the Same

Abstract

A semiconductor device comprises a substrate and quantum dots, wherein a peak emission of the quantum dots has a FWHM of less than 20 meV when the semiconductor is measured at a temperature of 4 Kelvin.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a substrate; and   doped quantum dots disposed on the substrate.   
     
     
         2 . The semiconductor device of  claim 1 , further comprising a buffer layer disposed between the substrate and the doped quantum dots, wherein:
 the buffer layer includes a group III material and a group V material; and   the doped quantum dots include a group III material and a group V material.   
     
     
         3 . The semiconductor device of  claim 2 , wherein the buffer layer includes GaAs and the doped quantum dots include GaAs. 
     
     
         4 . The semiconductor device of  claim 1 , wherein the doped quantum dots are doped by a group II or group IV material. 
     
     
         5 . The semiconductor device of  claim 4 , wherein the doped quantum dots are doped with carbon. 
     
     
         6 . The semiconductor device of  claim 2 , wherein the buffer layer includes GaN or AlN, and the doped quantum dots include GaN. 
     
     
         7 . The semiconductor device of  claim 6 , wherein the doped quantum dots are doped with carbon, silicon, or zinc. 
     
     
         8 . The semiconductor device of  claim 2 , wherein the buffer layer includes GaAs and the doped quantum dots include GaSb. 
     
     
         9 . The semiconductor device of  claim 8 , wherein the doped quantum dots are doped with carbon, silicon, or Pb. 
     
     
         10 . A semiconductor device, comprising:
 a substrate; and   doped quantum dots disposed on the substrate;   wherein a photoluminescence spectrum of the doped quantum dots has single peak or more than one peak at a temperature less than or equal to room temperature.   
     
     
         11 . The semiconductor device of  claim 10 , further comprising a buffer layer disposed between the substrate and the doped quantum dots, wherein:
 the buffer layer comprises a group Ill material and a group V material, and the doped quantum dots comprise a group Ill material and a group V material.   
     
     
         12 . The semiconductor device of  claim 11 , wherein the buffer layer includes GaAs and the doped quantum dots comprise GaAs. 
     
     
         13 . The semiconductor device of  claim 10 , wherein the doped quantum dots are doped by a group II or group IV material. 
     
     
         14 . The semiconductor device of  claim 13 , wherein the doped quantum dots are doped with carbon. 
     
     
         15 . The semiconductor device of  claim 14 , wherein the photoluminescence spectrum of the doped quantum dots has single peak or more than one peak in the visible light range. 
     
     
         16 . The semiconductor device of  claim 15 , wherein the photoluminescence spectrum of the doped quantum dots has single peak or more than one peak covering the range of wavelengths from about 620 nm to about 750 nm. 
     
     
         17 . The semiconductor device of  claim 11 , wherein the buffer layer includes GaN or AlN, and the doped quantum dots include GaN. 
     
     
         18 . The semiconductor device of  claim 17 , wherein the doped quantum dots are doped with carbon, silicon, or zinc. 
     
     
         19 . The semiconductor device of  claim 11 , wherein the buffer layer includes GaAs and the doped quantum dots include GaSb. 
     
     
         20 . The semiconductor device of  claim 19 , wherein the doped quantum dots are doped with carbon, silicon, or Pb. 
     
     
         21 . A semiconductor device, comprising:
 a buffer layer disposed on a substrate, the buffer layer includes a group III material and a group V material;   a group III-V material layer disposed on the buffer layer, and   doped quantum dots embedded in the group III-V material layer, the doped quantum dots including a group III material and a group V material and being doped by a group II or group IV material.   
     
     
         22 . The semiconductor device of  claim 21 , wherein the buffer layer includes GaAs and the doped quantum dots include GaAs. 
     
     
         23 . The semiconductor device of  claim 22 , wherein the doped quantum dots are doped with carbon. 
     
     
         24 . The semiconductor device of  claim 21 , wherein the buffer layer includes GaN or AlN, and the doped quantum dots include GaN. 
     
     
         25 . The semiconductor device of  claim 24 , wherein the doped quantum dots are doped with carbon, silicon, or zinc. 
     
     
         26 . The semiconductor device of  claim 21 , wherein the buffer layer includes GaAs and the doped quantum dots include GaSb. 
     
     
         27 . The semiconductor device of  claim 26 , wherein the doped quantum dots are doped with carbon, silicon, or Pb. 
     
     
         28 . The semiconductor device of  claim 21 , further comprising:
 first superlattices interposed between the substrate and the group III-V material layer, wherein the first superlattices include a group III material and a group V material.   
     
     
         29 . The semiconductor device of  claim 21 , further comprising:
 second superlattices disposed on the group III-V material layer, wherein the second superlattices include a group III material and a group V material.