Lattice matchable alloy for solar cells

Abstract

An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga 1-x In x N y As 1-y-z Sb z with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga 1-x In x N y As 1-y-z Sb z are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.

What is claimed is: 
     
         1 . An electron generating junction comprising a semiconductor alloy composition, wherein the semiconductor alloy composition is Ga 1-x In x N y As 1-y-z Sb z  wherein, the content values for x, y, and z are within composition ranges as follows: 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03;
 the content levels are selected such that the semiconductor alloy composition exhibits a bandgap from 0.9 eV to 1.1 eV; and a short circuit current density Jsc greater than 13 mA/cm 2  and an open circuit voltage Voc greater than 0.3 V when illuminated with a filtered 1 sun AM1.5D spectrum in which all light having an energy greater than the bandgap of GaAs is blocked. 
 
     
     
         2 . The electron generating junction of  claim 1 , wherein the semiconductor alloy composition is characterized by a thickness from 1 μm to 2 μm. 
     
     
         3 . The electron generating junction of  claim 1 , wherein the semiconductor alloy composition is characterized by a thickness greater than 1 μm. 
     
     
         4 . The electron generating junction of  claim 1 , wherein the semiconductor alloy composition is substantially lattice matched to GaAs. 
     
     
         5 . The electron generating junction of  claim 1 , wherein the semiconductor alloy composition is substantially lattice matched to Ge. 
     
     
         6 . The electron generating junction of  claim 1 , wherein the semiconductor alloy composition is n-doped. 
     
     
         7 . The electron generating junction of  claim 1 , wherein the semiconductor alloy composition is p-doped. 
     
     
         8 . The electron generating junction of  claim 1 , wherein the semiconductor alloy composition is in the form of a layer of semiconductor material. 
     
     
         9 . The electron generating junction of  claim 1 , wherein the content values are selected such that the semiconductor alloy composition is lattice matched to GaAs or Ge. 
     
     
         10 . A diode comprising the electron generating junction of  claim 1 . 
     
     
         11 . A photodiode comprising the electron generating junction of  claim 1 . 
     
     
         12 . A photodetector comprising the electron generating junction of  claim 1 .