Thin film wavelength converters and methods for making the same

Abstract

Thin film wavelength converters and methods for making the same are disclosed. In some embodiments, the thin film converters include a first thin film layer of first wavelength conversion material, a conductive layer, and a second thin film layer of a second wavelength conversion material. In one embodiment, a photoresist mask is applied to the conductive layer to form a pattern of by which the second wavelength conversion material may be applied by electrophoretic deposition to the exposed regions of the surface of the conductive layer.

1 - 9 . (canceled) 
     
     
         10 . A method of forming a thin film wavelength converter, comprising:
 depositing a first thin film layer of at least one first wavelength conversion material on a substrate using a first deposition process;   depositing an electrically conductive layer using a second deposition process; and   depositing a second thin film layer of at least one second wavelength conversion material on said electrically conductive layer using an electrophoretic deposition process;   
       wherein:
 said first thin film layer is configured to convert incident primary light from a light source in a first wavelength range to secondary light in a second wavelength range, the first thin film layer having a thickness ranging from about 10 nanometers (nm) to about 20 micrometers (μm); and 
 said second thin film layer is configured to convert at least one of said primary light and said secondary light to tertiary light in a third wavelength range, said second wavelength range being different from said third wavelength range. 
 
     
     
         11 . The method of  claim 10 , wherein said first deposition process is selected from the group consisting of physical vapor deposition, electrophoretic deposition, chemical vapor deposition, epitaxy, sputtering, pulsed laser deposition, and combinations thereof. 
     
     
         12 . The method of  claim 10 , wherein said first wavelength conversion material is selected from the group consisting of garnet phosphors, oxynitride phosphors, nitride phosphors, silicate phosphors, and combinations thereof. 
     
     
         13 . The method of  claim 10 , wherein the at least one second wavelength conversion material is chosen from Y 3 Al 5 O 12 :Ce 3+ , Lu 3 Al 5 O 12 :Ce 3+ , Tb 3 Al 5 O 12 :Ce 3+ , M 2 Si 5 N 8 :Eu 2+  MSi 2 O 2 N 2 :Eu 2+ , BaMgSi 4 O 10 :Eu 2+ , M 2 SiO 4 :Eu 2+ , MAlSiN 3 :Eu 2+  and combinations thereof, wherein M is chosen from calcium, barium, strontium, and combinations thereof. 
     
     
         14 . The method of  claim 10 , wherein the method further comprises applying a photoresist mask to the conductive layer prior to depositing the second thin film layer, the photoresist mask having a pattern that exposes portions of the conductive layer. 
     
     
         15 . The method of  claim 14 , wherein said second thin film layer is patterned so as to form islands of said least of second wavelength conversion material on said conductive layer. 
     
     
         16 . The method of  claim 10 , wherein said substrate comprises an upper and lower surface and said first thin film layer is deposited on the upper surface and the conductive layer is deposited on the first thin film layer. 
     
     
         17 . The method of  claim 10 , wherein said substrate comprises an upper and lower surface and said first thin film layer is deposited on the lower surface and the conductive layer is deposited on the upper surface.