Layer-selective laser ablation patterning

Abstract

A method of fabricating an organic electronic device is provided. The organic electronic device has a structure including an upper conductive layer and an underlying layer immediately beneath said upper conducting layer and having at least one solution processable semiconducting layer. The upper conducting layer preferably has a thickness of between 10 nm and 200 nm. The method includes patterning said upper conductive layer of said structure by: laser ablating said upper conductive layer using a pulsed laser to remove regions of upper conductive layer from said underlying layer for said patterning; and wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer to expose said underlying layer beneath.

What is claimed is: 
     
         1 . A diode comprising a substrate bearing a lower conductive layer and an upper conductive layer, and with a layer of solution processable semiconducting material between said lower and upper conductive layers, wherein said upper conductive layer is patterned by laser ablating said upper conductive layer using a pulsed laser to remove regions of said upper conductive layer, wherein said laser ablating uses a single pulse of said laser to substantially completely remove a said region of said upper conductive layer.