Method for producing a high temperature-resistant target alloy, a device, an alloy and a corresponding component
Abstract
The present invention relates to a method for producing a high temperature-resistant target alloy. The method comprises (a) applying a vacuum to an attritor vessel containing the base material of the target alloy, (b) filling the attritor vessel with a powder containing the base material of the target alloy with a reduced alloy element content, (c) filling the attritor vessel with grinding balls containing the base material of the target alloy, (d) rotating the agitator of the attritor and/or the attritor vessel. The powder is alloyed by attrition of the attritor and/or attritor vessel and the grinding balls themselves. The invention also relates to a corresponding device for carrying out the method.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for producing a high temperature-resistant target alloy, wherein the method comprises
(a) applying a vacuum to an attritor vessel containing a base material of the target alloy, (b) filling the attritor vessel with a powder comprising the base material of the target alloy with a reduced alloy element content, (c) filling the attritor vessel with grinding balls comprising the base material of the target alloy, (d) rotating an agitator of the attritor and/or the attritor vessel, the powder being alloyed by attrition of the attritor and/or the attritor vessel and the grinding balls.
2 . The method of claim 1 , wherein the target alloy comprises TiAl.
3 . The method of claim 1 , wherein the base material powder is plasma-cleaned prior to (b) and/or the attritor vessel is plasma-cleaned prior to (a).
4 . The method of claim 1 , wherein mechanical alloying takes place under a vacuum of from 1×10 −6 to 1×10 −4 mbar or under an inert protective gas atmosphere at from 1×10 −3 mbar to 2000 mbar for a period of 0.5 h to 10 h and at a temperature of less than or equal to 400° C.
5 . The method of claim 1 , wherein
the powder of the base material in (b) comprises powder grains with a diameter of less than or equal to 500 μm and/or (d) is carried out at a rotational speed of from 30 to 2000 rpm for a period of from 1 to 10 hours.
6 . The method of claim 1 , wherein mechanically alloyed powder of the target alloy is heat-treated in a subsequent step in such a way that fine oxides are eliminated and/or residual oxygen is gettered out of a crystal lattice of the powder.
7 . The method of claim 6 , wherein the powder of the target alloy is heat-treated by laser or electron beam melting, laser metal deposition and/or by hot isostatic pressing and fine oxides having a size of from 1 to 500 nm are eliminated.
8 . The method of claim 7 , wherein the hot isostatic pressing is carried out at a temperature ranging from 1000° to 1500° for a period of from 1 h to 10 h at a pressure of from 10 to 500 MPa.
9 . The method of claim 1 , wherein
as alloying component at least
one of Si, Y, Hf, Er, Gd, B, C, Zr, Y, Hf, Nb, Mo, W, Co, Cr, V is used and/or
at least one compound from the group tungsten carbide, tungsten molybdenum alloys, zirconium oxide and yttrium oxide is used
and/or as main constituent of the target alloy and/or of the powder of the base material at least one of Fe, Ni, Ti, Al, Mo is present.
10 . The method of claim 9 , wherein as alloying component at least one of Si, Y, Hf, Er, Gd, B, C, Zr, Y, Hf, Nb, Mo, W, Co, Cr, V is used.
11 . The method of claim 9 , wherein as alloying component at least one compound from the group tungsten carbide, tungsten molybdenum alloys, zirconium oxide and yttrium oxide is used.
12 . The method of claim 1 , wherein a device comprising at least an attritor vessel with internal walls, an agitator, and at least one grinding ball is used and wherein all components of the device which come into contact with powder during mechanical alloying comprise the base material and/or at least one of the alloying components of the target alloy.
13 . The method of claim 1 , wherein in addition to main constituents, the powder comprising the base material is formed from, apart from unavoidable impurities: W: 0 to 8 at. %, C: 0 to 0.6 at. %, Zr: 0 to 6 at. %, B: 0 to 0.2 at. %, Nb: 4 to 25 at. %, Mo: 1 to 10 at. %, Co: 0.1 to 10 at. %, Cr: 0.5 to 3 at. % and/or V: 0.5 to 10 at. % and wherein the target alloy, in addition to main constituents, is formed from, apart from unavoidable impurities: W: 0 to 8 at. %, Si: 0. 2 to 0.35 at. %, C: 0 to 0.6 at. %, Zr: 0 to 6 at. %, Y: 0 to 1.5 at. %, Hf: 0 to 1.5 at. %, Er: 0 to 0.5 at. %, Gd: 0 to 0.5 at. %, B: 0 to 0.2 at. %, Nb: 4 to 25 at. %, Mo: 1 to 10 at. %, Co: 0.1 to 10 at. %, Cr: 0.5 to 3 at. % and/or V: 0.5 to 10 at. %.
14 . The method of claim 13 , wherein the main constituents comprise Ti and Al.
15 . A device for mechanically alloying a high temperature-resistant target alloy according to the method of claim 1 , wherein the device comprises at least
an attritor vessel with internal walls, an agitator, and at least one grinding ball, all components of the device coming into contact with powder during mechanical alloying comprising the base material and/or at least one of the alloying components of the target alloy.
16 . The device of claim 15 , wherein at least internal walls of the attritor vessel comprise the base material and/or at least one of the alloying components of the target alloy.
17 . The device of claim 16 , wherein at least a surface of the grinding balls comprises the base material and/or at least one of the alloying components of the target alloy.
18 . A high temperature-resistant alloy, wherein the alloy is obtained by the method of claim 1 .
19 . The alloy of claim 18 , wherein the alloy comprises at least one of iron, nickel, titanium, aluminum, molybdenum.
20 . The alloy of claim 18 , wherein the alloy comprises Ti and Al as main constituents.Cited by (0)
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