US2016133390A1PendingUtilityA1

Tantalum capacitor and method of manufacturing the same

48
Assignee: SAMSUNG ELECTRO MECHPriority: Nov 7, 2014Filed: Oct 16, 2015Published: May 12, 2016
Est. expiryNov 7, 2034(~8.3 yrs left)· nominal 20-yr term from priority
H01G 9/15H01G 9/012H01G 9/0029H01G 9/10H01G 9/0525H01G 9/055H01G 9/042
48
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Claims

Abstract

A tantalum capacitor includes a capacitor body; a tantalum wire protruding from one surface of the capacitor body; a molded part enclosing the capacitor body and the tantalum wire; an anode lead frame connected to the tantalum wire and exposed to an outer surface of the molded part; and a cathode lead frame disposed on an outer surface of the capacitor body and exposed to the outer surface of the molded part. The anode lead frame includes a bend portion.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A tantalum capacitor comprising:
 a capacitor body;   a tantalum wire protruding from one surface of the capacitor body;   a molded part enclosing the capacitor body and the tantalum wire;   an anode lead frame connected to the tantalum wire and exposed to an outer surface of the molded part; and   a cathode lead frame disposed on an outer surface of the capacitor body and exposed to the outer surface of the molded part,   wherein the anode lead frame includes a bend portion.   
     
     
         2 . The tantalum capacitor of  claim 1 , wherein the bend portion has an acute angle of 80° or less. 
     
     
         3 . The tantalum capacitor of  claim 1 , wherein the bend portion is disposed to be closer to the capacitor body than a portion in which the anode lead frame and the tantalum wire are connected, on the basis of a length direction of the capacitor body. 
     
     
         4 . The tantalum capacitor of  claim 1 , further comprising a support portion disposed on a surface of the anode lead frame. 
     
     
         5 . The tantalum capacitor of  claim 4 , wherein the support portion is disposed on at least one surface of a surface of the anode lead frame disposed in a width-length plane of the capacitor body and a surface of the anode lead frame forming an acute angle with the surface disposed in the width-length plane of the capacitor body, among surfaces of the anode lead frame forming the acute angle. 
     
     
         6 . The tantalum capacitor of  claim 5 , wherein the support portion is in contact with both the surface of the anode lead frame disposed in the width-length plane of the capacitor body and the surface of the anode lead frame forming the acute angle with the surface disposed in the width-length plane of the capacitor body. 
     
     
         7 . The tantalum capacitor of  claim 1 , further comprising a groove portion disposed in the anode lead frame. 
     
     
         8 . A method of manufacturing a tantalum capacitor, the method comprising steps of:
 preparing a conductive thin plate;   cutting and compressing the conductive thin plate to form a pre-anode lead frame and a cathode lead frame;   forming an anode lead frame having a bend portion by bending the pre-anode lead frame to form the bend portion;   mounting a capacitor body on the anode lead frame and the cathode lead frame, the capacitor body having a tantalum wire protruding from one surface; and   forming a molded part to enclose the capacitor body and the tantalum wire.   
     
     
         9 . The method of  claim 8 , wherein in the step of cutting and compressing the conductive thin plate to form the pre-anode lead frame and the cathode lead frame, the pre-anode lead frame and the cathode lead frame are simultaneously formed by a single process. 
     
     
         10 . The method of  claim 8 , wherein in the step of forming the anode lead frame having the bend portion by bending the pre-anode lead frame to form the bend portion, the pre-anode lead frame is bent so that an acute angle formed in the bend portion is 80° or less. 
     
     
         11 . The method of  claim 8 , wherein the step of mounting the capacitor body on the anode lead frame and the cathode lead frame includes aligning the bend portion to be closer to the capacitor body than a portion in which the anode lead frame and the tantalum wire are connected, on the basis of a length direction of the capacitor body. 
     
     
         12 . The method of  claim 8 , wherein the step of cutting and compressing the conductive thin plate to form the pre-anode lead frame and the cathode lead frame includes forming a support portion exposed to one surface of the pre-anode lead frame. 
     
     
         13 . The method of  claim 8 , wherein the step of cutting and compressing the conductive thin plate to form the pre-anode lead frame and the cathode lead frame includes forming a groove portion in the pre-anode lead frame. 
     
     
         14 . The method of  claim 13 , wherein in the step of forming the groove portion, the groove portion is formed integrally with the pre-anode lead frame by a single cutting and compressing process forming the pre-anode lead frame and the cathode lead frame. 
     
     
         15 . The method of  claim 13 , wherein in the step of forming the anode lead frame having the bend portion by bending the pre-anode lead frame to form the bend portion, the bend portion is formed by bending a portion of the pre-anode lead frame in which the groove portion is formed. 
     
     
         16 . The method of  claim 8 , wherein the step of mounting the capacitor body on the anode lead frame and the cathode lead frame includes bonding the anode lead frame to the tantalum wire.

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