Solar cell with dielectric back reflective coating

Abstract

In a method for producing a solar cell, a layer stack of dielectric layers is applied to a back of a solar cell substrate and the layer stack is heated and is held at temperatures of at least 700° C. during a time period of at least 5 minutes. The novel solar cell has a layer stack of dielectric layers on its back. At least one of the dielectric layers of the layer stack is densified so that its resistivity to firing-through of pastes with glass components is enhanced.

1 . A solar cell, comprising:
 a layer stack of a plurality of dielectric layers disposed on a back of the solar cell;   at least one of said dielectric layers of said layer stack being a densified layer having an enhanced resistivity to firing through of pastes with glass components as compared with a resistivity of the respective layer at a time immediately after a deposition thereof.   
     
     
         2 . The solar cell according to  claim 1 , wherein said layer stack includes a silicon oxide layer with a thickness of less than 100 nm. 
     
     
         3 . The solar cell according to  claim 2 , wherein the thickness of said silicon oxide layer is between 5 nm and 100 nm. 
     
     
         4 . The solar cell according to  claim 3 , wherein the thickness of said silicon oxide layer is between 10 nm and 100 nm. 
     
     
         5 . The solar cell according to  claim 1 , wherein said layer stack includes a silicon nitride layer having a thickness of less than 200 nm. 
     
     
         6 . The solar cell according to  claim 5 , wherein the thickness of said silicon nitride layer is between 50 nm and 200 nm. 
     
     
         7 . The solar cell according to  claim 5 , wherein the thickness of said silicon nitride layer is between 70 nm and 150 nm. 
     
     
         8 . The solar cell according to  claim 1 , wherein said layer stack includes a silicon oxide layer and a silicon nitride layer, with said silicon nitride layer being arranged on top of said silicon oxide layer.