US2016141319A1PendingUtilityA1

Solid state imaging device

56
Assignee: SONY CORPPriority: Nov 5, 2003Filed: Jan 22, 2016Published: May 19, 2016
Est. expiryNov 5, 2023(expired)· nominal 20-yr term from priority
H04N 25/76H10F 39/803H10F 39/18H10F 39/802H10F 39/12H01L 27/14643H01L 27/14603
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Claims

Abstract

A solid-state imaging device having an arrangement in which well contact is achieved for each pixel is provided. In the solid-state imaging device, a well contact part is formed in an activation region of a photoelectric conversion portion. The well contact part fixes a well in which the photoelectric conversion portion and transistors of the pixel are provided at a predetermined potential.

Claims

exact text as granted — not AI-modified
1 .- 10 . (canceled) 
     
     
         11 . An imaging device comprising:
 a unit cell including at least four photoelectric conversion portions;   each of the four photoelectric conversion portion including
 a first impurity region of a first conductivity type and 
 a second impurity region of a second conductivity type associated with the first impurity region; and 
 a well potential fixing part that fixes a potential of a well at a predetermined potential, 
 wherein, 
   the well potential fixing part is disposed at a center of the four photoelectric conversion portions.   
     
     
         12 . The imaging device according to  claim 11  further comprising a well potential fixing wire electrically connected to the well potential fixing part. 
     
     
         13 . The imaging device according to  claim 11  wherein the well potential fixing wire is extended to a vertical direction. 
     
     
         14 . The imaging device according to  claim 11  wherein the well potential fixing part is disposed at a part of at least one of four photoelectric conversion portions. 
     
     
         15 . The imaging device according to  claim 11  wherein,
 the well potential fixing part includes an impurity region of the second conductivity type whose density is higher than an impurity region of the second conductivity type in the well. 
 
     
     
         16 . The imaging device according to  claim 11  further comprising a signal processing circuitry that processes a pixel signal generated from the four photoelectric conversion portions. 
     
     
         17 . The imaging device according to  claim 16  further comprising a signal processing chip electrically connected to an sensor chip,
 wherein, 
 the unit cell and the well potential fixing part are included in the sensor chip, 
 the signal processing circuitry is included in the signal processing chip.

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