US2016148794A1PendingUtilityA1
Miniature sensor structures for ion mobility spectrometers
Est. expiryFeb 26, 2033(~6.6 yrs left)· nominal 20-yr term from priority
H05K 3/0014H05K 3/4038H01J 49/025G01N 27/622H05K 3/0044H01J 49/00H01J 49/0013
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Claims
Abstract
For ion mobility spectrometry applications, a desired shape of a sensor structure may be created by forming a desired shape from a ceramic material, such as aluminum nitride. In various embodiments, the sensor structure may be formed using discrete individual ceramic sheets and/or from a preformed ceramic tube. Via holes are formed into the sensor structure to provide for efficient circuitry configurations of the IMS drift tube and/or providing electrical connections between the interior and exterior of the drift tube.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for making a sensor structure, comprising:
forming a shaped structure made of a high temperature, non-electrically-conductive ceramic material; forming at least one via hole in the shaped structure; forming circuitry features on the shaped structure; and processing the shaped structure to obtain a sensor structure.
2 . The method according to claim 1 , wherein the ceramic material is aluminum nitride or alumina.
3 . The method according to claim 1 , wherein the sensor structure is an ion mobility spectrometry drift tube.
4 . The method according to claim 1 , wherein forming the shaped structure includes applying and forming at least two discrete sheets of the high temperature, non-electrically-conductive ceramic material into a structure having a desired shape.
5 . The method according to claim 4 , wherein the at least one via hole in the shaped structure is formed to provide a via hole that connects the interior and exterior of the shaped structure.
6 . The method according to claim 1 , wherein forming the shaped structure includes preforming a solid tube of the high temperature, non-electrically-conductive ceramic material.
7 . The method according to claim 6 , wherein the at least one via hole is machined into the solid tube.
8 . The method according to claim 1 , wherein forming the circuitry features includes forming conductive or resistive features on the shaped structure using an ink deposition process.
9 . A sensor structure, comprising:
a shaped structure made of a high temperature, non-electrically-conductive ceramic material; circuitry features formed on the shaped structure; and at least one via hole formed in the shaped structure.
10 . The sensor structure according to claim 9 , wherein the ceramic material is aluminum nitride or alumina.
11 . The sensor structure according to claim 9 , wherein the sensor structure is an ion mobility spectrometry drift tube.
12 . The sensor structure according to claim 9 , wherein the shaped structure is formed by applying and forming at least two discrete sheets of the high temperature, non-electrically-conductive ceramic material into a structure having a desired shape.
13 . The sensor structure according to claim 12 , wherein the at least one via hole in the shaped structure is formed to provide a via hole that connects the interior and exterior of the shaped structure.
14 . The sensor structure according to claim 9 , wherein the shaped structure is a preformed solid tube of the high temperature, non-electrically-conductive ceramic material.
15 . The sensor structure according to claim 14 , wherein the at least one via hole is machined into the solid tube.
16 . The sensor structure according to claim 9 , wherein the circuitry features are formed by deposited conductive or resistive features that are deposited on the shaped structure using an ink deposition process.
17 . An ion mobility spectrometer device, comprising:
an ion source; an analyzer component; and a drift tube coupled between the ion source and the analyzer component, wherein the drift tube includes:
a shaped structure made of a high temperature, non-electrically-conductive ceramic material;
circuitry features formed on the shaped structure; and
at least one via hole formed in the shaped structure.
18 . The ion mobility spectrometer device according to claim 17 , wherein the ceramic material is aluminum nitride or alumina.
19 . The ion mobility spectrometer device according to claim 17 , wherein the shaped structure is formed by applying and forming at least two discrete sheets of the high temperature, non-electrically-conductive ceramic material into a structure having a desired shape, and wherein the at least one via hole in the shaped structure is formed to provide a via hole that connects the interior and exterior of the shaped structure.
20 . The ion mobility spectrometer device according to claim 17 , wherein the shaped structure is a preformed solid tube of the high temperature, non-electrically-conductive ceramic material, and wherein the at least one via hole is machined into the solid tube.
21 . The ion mobility spectrometer device according to claim 17 , wherein the circuitry features are formed by deposited conductive or resistive features that are deposited on the shaped structure using an ink deposition process.Cited by (0)
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