US2016155896A1PendingUtilityA1

Quantum Dot Optoelectronic Device and Methods Therefor

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Assignee: BROTHER INTPriority: Jul 26, 2011Filed: Jan 22, 2016Published: Jun 2, 2016
Est. expiryJul 26, 2031(~5 yrs left)· nominal 20-yr term from priority
Inventors:Farzad Parsapour
H10K 30/50H10K 30/35H10F 77/1433H10H 20/812H10F 71/00H01L 33/06H01L 31/18H10K 2102/103Y02E10/549H10K 85/1135
52
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Claims

Abstract

An optoelectronic device and method for fabricating optoelectronic device, comprising: forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method for constructing an optoelectronic device, the method comprising:
 forming a quantum dot layer on a substrate including at least one electronically conductive layer, including a plurality of quantum dots which have organic capping layers; and   removing organic capping layers from the quantum dots of the quantum dot layer by physically treating the quantum dot layer, the physical treatment including both thermal treatment and plasma processing.   
     
     
         2 . The method of  claim 1 , further comprising:
 physically treating the quantum dot layer with the thermal treatment and the plasma processing simultaneously for a time period.   
     
     
         3 . The method of  claim 2 , further comprising:
 depositing the quantum dot layer on the substrate;   placing the substrate including the quantum dot layer in a plasma apparatus;   thermally treating the substrate by heating the substrate to a target temperature; and   plasma processing the substrate.   
     
     
         4 . The method of  claim 3 , further comprising:
 heating the substrate to the target temperature, where the target temperature is in the range of from about 40 degrees Celsius to about 90 degrees Celsius.   
     
     
         5 . The method of  claim 4 , further comprising:
 heating the substrate to the target temperature, wherein the target temperature is in the range of from about 70 degrees Celsius to about 80 degrees Celsius.   
     
     
         6 . The method of  claim 1 , further comprising:
 plasma processing with a plasma selected from the group consisting essentially of oxygen plasma or argon plasma.   
     
     
         7 . The method of  claim 3 ;
 wherein the plasma processing further comprises:
 placing the substrate including the quantum dot layer in a chamber of the plasma apparatus; 
 evacuating the chamber to a target pressure; 
 introducing a gas into the chamber; 
 stabilizing the chamber pressure; and 
 generating the plasma by applying a power density to the gas. 
   
     
     
         8 . The method of  claim 7 ,
 wherein the plasma processing further comprises:
 evacuating the chamber to a pressure of about 5 mTorr.; 
 introducing the gas into the chamber at a rate of from about 20 sccm to about 50 sccm; 
 stabilizing the chamber pressure to in a range of about 100 mTorr to about 200 mTorr; and 
 generating the plasma by applying a power density in a range of from about 0.6 mW/cm3 to about 3 mW/cm3 to the gas to generate the plasma. 
   
     
     
         9 . The method of  claim 8 ;
 wherein the plasma processing further comprises:
 introducing the gas into the chamber at about 25 sccm; 
 stabilizing the chamber pressure to about 150 mTorr; and 
 generating the plasma by applying a power density at about 1.4 mW/cm3 to generate the plasma. 
   
     
     
         10 . The method of  claim 2 , further comprising:
 simultaneously thermally treating and plasma processing the substrate for a time period in the range of from about 60 seconds to about 240 seconds.   
     
     
         11 . The method of  claim 10 , further comprising:
 simultaneously thermally treating and plasma processing the substrate for the time period of about 90 seconds.   
     
     
         12 . The method of  claim 2 ;
 wherein the physical treatment further comprises:
 ending the plasma processing; and 
 thermally treating the substrate for a time period after the plasma processing has ended. 
   
     
     
         13 . The method of  claim 12 ;
 wherein the time period after the plasma processing has ended is in a range of from about 1 minute to about 50 minutes.   
     
     
         14 . The method of  claim 13 ;
 wherein the time period after the plasma processing has ended is about 28 minutes.   
     
     
         15 . The method of  claim 1 , further comprising:
 physically treating the quantum dot layer with the thermal treatment and the plasma processing independently.   
     
     
         16 . The method of  claim 15 , further comprising:
 plasma processing the substrate for a time period in the range of from about 60 seconds to about 240 seconds.   
     
     
         17 . The method of  claim 16 , further comprising:
 plasma processing the substrate for the time period of about 90 seconds.   
     
     
         18 . The method of  claim 16 , further comprising:
 the thermally treating comprising heating the substrate to a target temperature, where the target temperature is in the range of from about 40 degrees Celsius to about 90 degrees Celsius.   
     
     
         19 . The method of  claim 18 , further comprising:
 heating the substrate to the target temperature, wherein the target temperature is in the range of from about 70 degrees Celsius to about 80 degrees Celsius.   
     
     
         20 . The method of  claim 15 , further comprising:
 after plasma processing, evacuating plasma from a plasma apparatus chamber;   maintaining the substrate under pressure inside the chamber; and   thermally treating the substrate in the chamber substrate for a time period after the plasma processing has ended.   
     
     
         21 . The method of  claim 20 ;
 wherein the time period is about 30 minutes.   
     
     
         22 . The method of  claim 15 , further comprising:
 after plasma processing, removing the substrate from a plasma apparatus prior to the temperature treatment.   
     
     
         23 . The method of  claim 22 ;
 wherein the substrate is moved to a separate device for temperature treatment.   
     
     
         24 . The method of  claim 15 , further comprising:
 forming a cathode electrical conducting layer on the quantum dot layer after the thermal treatment and the plasma processing.   
     
     
         25 . The method of  claim 22 , further comprising:
 performing the plasma processing on the quantum dot layer;   forming a cathode electrical conducting layer on the quantum dot layer; and   thermally treating the quantum dot layer after forming the cathode electrical conducting layer.   
     
     
         26 . The method of  claim 15 , further comprising:
 forming a cathode electrical conducting layer on the quantum dot layer after the thermal treatment and the plasma processing.   
     
     
         27 . The method of  claim 23 ;
 wherein the separate device for temperature treatment is an inert atmosphere device.

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