Plasma treating apparatus, substrate treating method, and method of manufacturing a semiconductor device

Abstract

A substrate treating method may be performed by a plasma treating apparatus. The substrate treating method may include: providing a substrate on a platform in a lower portion of an inner space of a process chamber; directing a first process gas upward from a first nozzle formed at an inner wall of the process chamber into an upper portion of the inner space, the first process gas being an inert gas and wherein the first nozzle is an obliquely upward-oriented nozzle structured to direct the first process gas upward; directing a second process gas downward from a second nozzle formed at a inner wall of the process chamber into a lower portion of the inner space, the second process gas being hydrogen gas and wherein the second nozzle is an obliquely downward-oriented nozzle structured to direct the second process gas downward; and applying a microwave to the upper portion of the inner space to excite the first process gas and the second process gas into plasma, and then processing the substrate.

1 . A plasma treating apparatus comprising:
 a process chamber having an inner space that is formed therein;   a microwave applying unit configured to excite a gas of the inner space into plasma;   a first nozzle formed in an inner wall of the process chamber, the first nozzle structured to direct a first process gas toward an upper portion of the inner space; and   a second nozzle formed in the inner wall of the process chamber, the second nozzle structured to direct a second process gas toward a lower portion of the inner space.   
     
     
         2 . The plasma treating apparatus of  claim 1 , wherein an end of the first nozzle is formed in a ring shape along the inner wall of the process chamber. 
     
     
         3 . The plasma treating apparatus of  claim 1 , wherein the first nozzle is formed to be inclined upward as going from an outside of the process chamber to an inside. 
     
     
         4 . The plasma treating apparatus of  claim 1 , wherein an end of the second nozzle is formed in a ring shape along the inner wall of the process chamber. 
     
     
         5 . The plasma treating apparatus of  claim 1 , wherein the second nozzle is formed to be inclined downward as going from an outside of the process chamber to an inside. 
     
     
         6 . The plasma treating apparatus of  claim 1 , wherein an end of the first nozzle exposed to the inner space is disposed under an end of the second nozzle exposed to the inner space. 
     
     
         7 . The plasma treating apparatus of  claim 1 , wherein an end of the first nozzle exposed to the inner space is disposed above an end of the second nozzle exposed to the inner space. 
     
     
         8 . The plasma treating apparatus of  claim 1 , wherein the first nozzle comprises a plurality of spray parts that have a hole shape and are directed toward the inner wall of the process chamber. 
     
     
         9 . The plasma treating apparatus of  claim 8 , wherein the first spray parts are arranged along a circumferential direction of the inner wall of the process chamber. 
     
     
         10 . The plasma treating apparatus of  claim 8 , wherein the second nozzle comprises a plurality of second spray parts that have a hole shape and are directed toward the inner wall of the process chamber. 
     
     
         11 . The plasma treating apparatus of  claim 10 , wherein the second spray parts are arranged along a circumferential direction of the inner wall of the process chamber. 
     
     
         12 . The plasma treating apparatus of  claim 11 , wherein the first spray parts and the second spray parts are arranged so as not to overlap each other as viewed from above. 
     
     
         13 . The plasma treating apparatus of  claim 11 , wherein ends of the first spray parts, which are exposed to the inner wall, and ends of the second spray parts, which are exposed to the inner wall, are disposed at the same height. 
     
     
         14 . The plasma treating apparatus of  claim 1 , wherein the first process gas is an inert gas. 
     
     
         15 . The plasma treating apparatus of  claim 14 , wherein the second process gas is a hydrogen gas. 
     
     
         16 - 34 . (canceled)