Addressable siox memory array with incorporated diodes

Abstract

Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiO x , SiO x N y , SiO x N y H, SiO x C z , SiO x C z H, and combinations thereof, wherein each of x, y and z are equal or greater than 1 or equal or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.

What is claimed is: 
     
         1 . A method of forming a resistive memory cell, wherein the method comprises:
 depositing doped silicon on a substrate, wherein the substrate is an insulating substrate;   depositing a first electrode on the insulating substrate;   depositing a diode;   depositing a resistive memory material, wherein the resistive memory material is selected from the group consisting of SiO x , SiO x H, SiO x N y , SiO x N y H, SiO x C z , SiO x C z H, and combinations thereof, wherein each of x, y and z are equal to or greater than 1 or equal to or less than 2; and   depositing a second electrode.   
     
     
         2 . The method of  claim 1 , wherein the resistive memory material is deposited on the first electrode; and the diode is deposited on the resistive memory material. 
     
     
         3 . The method of  claim 1 , wherein diode is deposited on the first electrode. 
     
     
         4 . The method of  claim 3 , further comprising depositing a metallic layer on the diode, wherein the resistive memory material is deposited on the metallic layer. 
     
     
         5 . The method of  claim 1 , wherein the first electrode is deposited on the doped silicon; and
 depositing a metallic layer on the doped silicon, wherein the resistive memory material is deposited on the metallic layer.   
     
     
         6 . The method of  claim 1 , wherein the diode is selected from the group consisting of n-p diodes, p-n diodes, and Schottky diodes.