Hybrid organic/inorganic eutectic solar cell

Abstract

A semiconductor assembly including substantially non-crystalline substrate having a predetermined softening point, a textured buffer layer deposited on said substrate, a polymer film deposited on said buffer layer, and an inorganic or silicon inorganic film deposited on said polymer film. The buffer layer, polymer film, and inorganic or silicon inorganic film are each deposited at a respective deposition temperature that is below the softening point of the substrate. A method is disclosed for making a hybrid solar cell comprising organic and inorganic materials on an inexpensive substrate, such as glass. The materials are deposited on the substrate at low temperatures using eutectics and crystalline buffer layers such as MgO and Al2O3. Such a device can also be used for OLETs (organic light emitting transistors) and OLEDs (organic light emitting diodes) used in displays.

1 . A semiconductor assembly comprising:
 a substantially non-crystalline substrate having a predetermined softening point;   a textured buffer layer deposited on said substrate;   a polymer film deposited on said buffer layer; and   a silicon inorganic film deposited on said polymer film   wherein the buffer layer, polymer film, and silicon inorganic film are each deposited at a respective deposition temperature that is below the softening point of the substrate.   
     
     
         2 . The semiconductor assembly of  claim 1 , where said semiconductor assembly is used for Organic Light Emitting Transistors (OLETs). 
     
     
         3 . The semiconductor assembly of  claim 1 , where said semiconductor assembly is used for Organic Light Emitting Diodes (OLEDs). 
     
     
         4 . A semiconductor assembly comprising:
 a substantially non-crystalline substrate having a predetermined softening point;   a textured buffer layer deposited on said substrate;   a polymer film deposited on said buffer layer; and   an inorganic semiconductor film deposited on said polymer film   wherein the buffer layer, polymer film, and inorganic semiconductor film are each deposited at a respective deposition temperature that is below the softening point of the substrate.   
     
     
         5 . The semiconductor assembly of  claim 4 , where said semiconductor assembly is used for Organic Light Emitting Transistors (OLETs). 
     
     
         6 . The semiconductor assembly of  claim 4 , where said semiconductor assembly is used for Organic Light Emitting Diodes (OLEDs). 
     
     
         7 . The semiconductor assembly of  claim 1 , where said semiconductor assembly is used for a solar cell. 
     
     
         8 . The semiconductor assembly of  claim 4 , where said semiconductor assembly is used for a solar cell. 
     
     
         9 . The semiconductor assembly of  claim 1 , where said substantially non-crystalline substrate is glass or plastic. 
     
     
         10 . The semiconductor assembly of  claim 4 , where said substantially non-crystalline substrate is glass or plastic. 
     
     
         11 . The semiconductor assembly of  claim 1 , where the buffer layer is magnesium oxide (MgO) or aluminum OLEDs or oxide (Al 2 O 3 ). 
     
     
         12 . The semiconductor assembly of  claim 1 , where said silicon inorganic film is a semiconductor comprising Cadmium Selenide (CdSe). 
     
     
         13 . The semiconductor assembly of  claim 1 , where said silicon inorganic film is single crystalline, highly textured, and/or large grained. 
     
     
         14 . The method of  claim 4 , where the buffer layer is magnesium oxide (MgO) or aluminum oxide (Al 2 O 3 ). 
     
     
         15 . The semiconductor assembly of  claim 4 , where said inorganic semiconductor film is a semiconductor comprising Cadmium Selenide (CdSe). 
     
     
         16 . The method of  claim 4 , where said inorganic semiconductor film is single crystalline, highly textured, and/or large grained. 
     
     
         17 . The method of  claim 1 , where said polymer film is a natural polymer. 
     
     
         18 . The method of  claim 1 , where said polymer film is a synthetic polymer. 
     
     
         19 . The method of  claim 1 , where said polymer film is textured, replicating the texture of the buffer layer.