Bent nanowires and related probing of species

Abstract

The present invention generally relates to nanoscale devices and methods, including bent nanowires and other bent nanoscale objects, and in particular, the ability to probe cells with nanoscale objects. In some aspects, nanoscale objects, including nanowires, are provided that facilitate cell probing, e.g. nanowires that are surface modified such that cells can fuse with the nanowires. Devices including nanoscale objects are provided that allow small or large scale (e.g., multiplexed) probing of cells, and related methods of making such nanoscale objects and devices, and methods of investigating cells, are provided by certain embodiments of the invention. In a related set of embodiments, the present invention is generally related to bent nanowires and other bent nanoscale objects. For instance, in one aspect, the present invention is generally related to a semiconductor nanoscale wire having at least one kink. The semiconductor nanoscale wire may be formed out of any suitable semiconductor, e.g., Si, CdS, Ge, or the like. In some embodiments, a kink in the semiconductor nanoscale wire may be at an angle of about 120° or a multiple thereof. Yet other aspects of the invention are generally directed to methods of using such nanoscale wires, kits involving such nanoscale wires, devices involving such nanoscale wires, or the like.

What is claimed is: 
     
         1 - 44 . (canceled) 
     
     
         45 . A method, comprising:
 penetrating a membrane of a cell with a semiconductor nanoscale object; and   electrically communicating with the cell.   
     
     
         46 . The method of  claim 45 , further comprising determining an electrical potential inside the cell. 
     
     
         47 . The method of  claim 45 , wherein electrically communicating with the cell comprises determining an electric field. 
     
     
         48 . The method of  claim 45 , wherein electrically communicating with the cell comprises electrically communicating with the cell using a field effect. 
     
     
         49 . The method of  claim 45 , wherein the membrane is a cell membrane. 
     
     
         50 . The method of  claim 45 , wherein the membrane is an inner membrane. 
     
     
         51 . The method of  claim 45 , wherein the semiconductor nanoscale object is bent. 
     
     
         52 . The method of  claim 45 , wherein the semiconductor nanoscale object has at least one kink. 
     
     
         53 . The method of  claim 45 , wherein the semiconductor nanoscale object is a wire. 
     
     
         54 . The method of  claim 45 , further comprising inducing an action potential in the cell. 
     
     
         55 . The method of  claim 45 , wherein the cell is a neuronal cell. 
     
     
         56 . The method of  claim 45 , wherein the cell is a cardiomyocyte. 
     
     
         57 . The method of  claim 45 , further comprising electrically communicating with the cell at a plurality of regions in the cell. 
     
     
         58 . The method of  claim 45 , wherein the nanoscale object is a semiconductor nanowire. 
     
     
         59 . The method of  claim 45 , wherein the nanoscale object is a carbon nanotube. 
     
     
         60 - 127 . (canceled)