Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

Abstract

A method of growing a semiconductor film including the following steps: providing a substrate, depositing a metal thin film on the substrate, depositing an initial semiconductor film on the metal thin film to form a semiconductor film on the substrate, and depositing a different semiconductor material on the semiconductor film. An electromagnetic device and the relevant elements is also included. Such methods and decies being used in tandem cells.

1 . A method of growing a semiconductor film comprising the following steps:
 providing a substrate;   depositing a metal thin film on said substrate;   depositing an initial semiconductor film on said metal thin film to form a semiconductor film on said substrate; and   depositing a different semiconductor material on said semiconductor film.   
     
     
         2 . The method as recited in  claim 1  further comprising applying the semiconductor film to tandem solar cells. 
     
     
         3 . The method as recited in  claim 1  further comprising depositing a buffer layer on the substrate prior to depositing the metal thin film. 
     
     
         4 . The method as recited in  claim 3  wherein the buffer layer is textured. 
     
     
         5 . The method as recited in  claim 4  wherein the different semiconductor film is deposited heteroepitaxially. 
     
     
         6 . The method as recited in  claim 4  wherein the semiconductor film is textured. 
     
     
         7 . The method as recited in  claim 4  wherein the semiconductor film forms epitaxially. 
     
     
         8 . An electromagnetic device comprising:
 a substrate;   a metal thin film deposited on said substrate;   an initial semiconductor film deposited on said metal thin film to form an semiconductor film; and   a different semiconductor material deposited on said semiconductor film.   
     
     
         9 . The electromagnetic device as recited in  claim 8  wherein electromagnetic device is a tandem solar cell. 
     
     
         10 . The method as recited in  claim 8  further comprising a buffer layer between the substrate and the metal thin film. 
     
     
         11 . The method as recited in  claim 10  wherein the buffer layer is textured. 
     
     
         12 . The method as recited in  claim 11  wherein the different semiconductor film is heteroepitaxial. 
     
     
         13 . The method as recited in  claim 8  wherein the semiconductor film is formed epitaxially. 
     
     
         14 . The electromagnetic device as recited in  claim 8  wherein said different semiconductor film is a silicide. 
     
     
         15 . The electromagnetic device as recited in  claim 8  wherein said initial semiconductor film is silicon rich. 
     
     
         16 . The electromagnetic device as recited in  claim 8  wherein said initial semiconductor film is a conductive layer for a photovoltaic device to be built. 
     
     
         17 . The electromagnetic device as recited in  claim 8  wherein the substrate is glass, metal tape or plastic. 
     
     
         18 . The electromagnetic device as recited in  claim 8  wherein the substrate is crystalline. 
     
     
         19 . The electromagnetic device as recited in  claim 8  wherein the substrate is non crystalline.