Photoelectric conversion device and method of manufacturing the same

Abstract

A method of manufacturing a photoelectric conversion device of an embodiment includes: forming a layer on a substrate; and drying this layer. The layer contains a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1). The layer is dried under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C. R 1 —(CH 2 ) n —R 2   (1) Here, n: 1 to 20, and R1, R2: halogen or SH

What is claimed is: 
     
         1 . A method of manufacturing a photoelectric conversion device, comprising:
 forming a layer containing a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1) on a substrate; and   drying the layer under pressures of 100 Pa or less and substrate temperatures of 40 to 200° C.
   R 1 —(CH 2 ) n —R 2    (1)
 
   n: 1 to 20   R1, R2: halogen or SH   
     
     
         2 . The method of  claim 1 ,
 wherein the pressures are 1×10 −3  Pa or less and the temperatures are 40 to 160° C.   
     
     
         3 . The method of  claim 1 ,
 wherein:   the dried layer has a microphase-separated structure of the p-type semiconductor and the n-type semiconductor;   the p-type semiconductor has a polymer; and   the n-type semiconductor has a fullerene derivative.   
     
     
         4 . The method of  claim 1 ,
 wherein the compound is 1,8-diiodooctane.   
     
     
         5 . A photoelectric conversion device, comprising:
 a first electrode layer;   a second electrode layer; and   a photoelectric conversion layer disposed between the first and second electrode layers and including an organic active layer,   the organic active layer containing a p-type semiconductor, an n-type semiconductor, and a compound represented by the following formula (1), and   a concentration of the compound being 0.001 mass % or more to less than 0.1 mass %.
   R 1 —(CH 2 ) n —R 2    (1)
 
   n: 1 to 20   R1, R2: halogen or SH   
     
     
         6 . The photoelectric conversion device of  claim 5 ,
 wherein the photoelectric conversion layer has a microphase-separated structure of the p-type semiconductor and the n-type semiconductor,   the p-type semiconductor has a polymer; and   the n-type semiconductor has a fullerene derivative.   
     
     
         7 . The photoelectric conversion device of  claim 5 ,
 wherein the compound is 1,8-diiodooctane.