System and method for depositing a material on a substrate

Abstract

A method and apparatus for depositing a film on a substrate includes a plasma source positioned proximate to a distributor configured to provide a semiconductor coating on a substrate.

1 - 28 . (canceled) 
     
     
         29 . A method of depositing a material on a substrate comprising: providing a first power source configured to heat a distributor, the distributor configured to deposit a semiconductor coating on a substrate; providing a plasma source including an electrode that is electrically independent from the first power source; and exciting a plasma within a volume proximate to the distributor. 
     
     
         30 . The method of  claim 29 , wherein the plasma source further comprises an additional electrode configured to bias the plasma with respect to the substrate. 
     
     
         31 . The method of  claim 29 , wherein the electrode includes a non-metallic material. 
     
     
         32 . The method of  claim 29 , wherein the electrode includes carbon. 
     
     
         33 . The method of  claim 29 , wherein the electrode is a backcap over the distributor. 
     
     
         34 . The method of  claim 33 , wherein the backcap is a graphite backcap. 
     
     
         35 . The method of  claim 29 , wherein the distributor includes a pair of sheath tubes including a first sheath tube and a second sheath tube. 
     
     
         36 . The method of  claim 35 , wherein the electrode is a spacer between the first sheath tube and the second sheath tube. 
     
     
         37 . The method of  claim 36 , wherein the spacer is a graphite spacer. 
     
     
         38 . The method of  claim 35 , wherein the electrode is a backcap over the first sheath tube and the second sheath tube. 
     
     
         39 . The method of  claim 29 , wherein the distributor includes a pair of sheath tubes including a first sheath tube and a second sheath tube, and the plasma source includes three graphite components electrically isolated from one another. 
     
     
         40 . The method of  claim 39 , wherein the first graphite component is a first spacer separating the first sheath tube from the second sheath tube, the second graphite component is a second spacer separating the first sheath tube from the second sheath tube, and the third graphite component is a backcap over the first sheath tube and the second sheath tube. 
     
     
         41 . The method of  claim 40 , further comprising an insulator between the backcap and each of the spacers. 
     
     
         42 . The method of  claim 29 , wherein the distributor includes at least one distribution hole configured to provide a semiconductor coating on a substrate. 
     
     
         43 . The method of  claim 29 , wherein the plasma source is driven by direct current. 
     
     
         44 . The method of  claim 29 , wherein the plasma source is driven by alternating current. 
     
     
         45 . The method of  claim 29 , wherein the plasma source is driven by pulsed direct current. 
     
     
         46 . The method of  claim 29 , wherein the plasma source is driven by radiofrequency electrical excitation. 
     
     
         47 . The method of  claim 29 , further comprising a conveyor configured to transport the substrate past the distributor. 
     
     
         48 . The method of  claim 29 , wherein the distributor is positioned within a deposition chamber, the deposition chamber including an entry through which the substrates to be coated are introduced into the deposition chamber; and the deposition chamber including an exit through which the coated substrates leave the deposition chamber. 
     
     
         49 . The method of  claim 29 , wherein the distributor includes a ceramic tube. 
     
     
         50 . The method of  claim 29 , wherein the distributor includes mullite tube. 
     
     
         51 . The method of  claim 29 , wherein the distributor includes a ceramic sheath tube. 
     
     
         52 . The method of  claim 29 , further comprising a heater positioned within the distributor. 
     
     
         53 . The method of  claim 29 , wherein the plasma source is configured to generate plasma in a region less than 10 centimeters from a substrate. 
     
     
         54 . The method of  claim 29 , wherein the plasma source is configured to generate plasma in a region less than 7 centimeters from a substrate. 
     
     
         55 . The method of  claim 29 , wherein the plasma source is configured to generate plasma in a region less than 5 centimeters from a substrate. 
     
     
         56 . The method of  claim 29 , wherein the plasma source is configured to generate plasma in a region less than 2 centimeters from a substrate.