US2016319445A1PendingUtilityA1
Formation of capped nano-pillars
Assignee: HEWLETT PACKARD DEVELOPMENT CO LPPriority: Oct 21, 2010Filed: Jul 7, 2016Published: Nov 3, 2016
Est. expiryOct 21, 2030(~4.3 yrs left)· nominal 20-yr term from priority
B01D 63/088B01D 2325/028C25D 1/006B01D 67/0065B01D 69/02C25D 11/02B81C 1/00031B01L 3/502753B81B 2203/0361B01L 3/502746
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Claims
Abstract
A method of forming capped nano-pillars on a substrate includes forming a template on the substrate, the template defining nano-pores having a first width. The nano-pores are partially filled to define nano-pillar stem portions of a first thickness corresponding to the first width. The nano-pores are re-shaped to define re-shaped nano-pore sections having a second width different than the first width. The re-shaped nano-pore sections are at least partially filled to define nano-pillar cap portions of a second thickness corresponding to the second width. The method further includes removing the template.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of forming capped nano-pillars on a substrate, the method comprising:
forming a template on the substrate, the template defining nano-pores having a first width; partially filling the nano-pores to define nano-pillar stem portions of a first thickness corresponding to the first width; re-shaping the nano-pores to define re-shaped nano-pore sections having a second width different than the first width; at least partially filling the re-shaped nano-pore sections to define nano-pillar cap portions of a second thickness corresponding to the second width; and removing the template.
2 . The method of claim 1 , wherein partially filling the nano-pores includes:
forming a layer of a first oxidizable material; and anodizing the layer of first oxidizable material to grow oxide from the first oxidizable material into the nano-pores.
3 . The method of claim 2 , wherein re-shaping the nano-pores includes selectively etching the nano-pores to broaden unfilled regions of the nano-pores.
4 . The method of claim 3 , wherein at least partially filling the re-shaped nano-pore sections includes further anodizing the first oxidizable material to grow oxide into the re-shaped sections.
5 . The method of claim 1 , wherein forming a template includes:
forming a layer of a second oxidizable material; and anodizing the layer of second oxidizable material to define the nano-pores.
6 . The method of claim 5 wherein the layer of the second oxidizable material is disposed beneath the template, and wherein the method further comprises forming the nano-pillar cap portions by further anodizing the layer of the second oxidizable material, to grow oxide into the re-shaped nano-pore sections.
7 . The method of claim 1 wherein, after removing the template, a nano-structure array is formed on the substrate, and wherein:
the nano-structure array includes a plurality of the capped nano-pillars having columnar stem portions;
the first thickness is different than the second thickness; and
each of the stem portions and the cap portions consists of an oxide of a refractory metal or alloy.
8 . The method of claim 7 , wherein the first thickness is substantially uniform along a height of the stem portions, and the second thickness is substantially uniform along a height of the cap portions.
9 . The method of claim 8 , wherein the second thickness is greater than the first thickness.
10 . The method of claim 9 , wherein the stem portions have a first height and the cap portions have a second height, the first height being greater than the second height.
11 . The method of claim 9 , wherein the stem portions have a first height and the cap portions have a second height, the first height being less than the second height.
12 . A method of forming capped nano-pillars on a substrate, the method comprising:
depositing a first oxidizable material onto the substrate; depositing a second oxidizable material onto the first oxidizable material; anodizing the second oxidizable material to form a porous oxide having nano-pores that extend through the porous oxide to expose portions of the first oxidizable material; anodizing the first oxidizable material so as to partially fill the nano-pores in the porous oxide with an oxide of the first oxidizable material; broadening unfilled sections of the nano-pores by selective etching; and further anodizing the first oxidizable material so as to at least partially fill broadened sections of the nano-pores with the oxide of the first oxidizable material; and further removing porous oxide by selective etching, thereby yielding an array of capped nano-pillars on the substrate.
13 . The method of claim 12 , wherein anodizing the first oxidizable material comprises anodizing the first oxidizable material with a first voltage corresponding to a target nano-pillar stem portion height.
14 . The method of claim 12 , wherein further anodizing the first oxidizable material comprises anodizing the first oxidizable material with a second voltage corresponding to a target nano-pillar cap portion height.
15 . The method of claim 12 , wherein broadening unfilled sections of the nano-pores comprises etching of the substrate in an etchant solution configured to etch the porous oxide at a substantially higher etch rate than the oxide of the first oxidizable material.Cited by (0)
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