Extremely Low Resistance Films and Methods for Modifying or Creating Same

Abstract

Operational characteristics of an extremely low resistance (“ELR”) film comprised of an ELR material may be improved by depositing a modifying material onto appropriate surfaces of the ELR film to create a modified ELR film. In some implementations of the invention, the ELR film may be in the form of a “c-film.” In some implementations of the invention, the ELR film may be in the form of an “a-b film,” an “a-film” or a “b-film.” The modified ELR film has improved operational characteristics over the ELR film alone or without the modifying material. Such operational characteristics may include operating in an ELR state at increased temperatures, carrying additional electrical charge, operating with improved magnetic properties, operating with improved mechanic properties or other improved operational characteristics. In some implementations of the invention, the ELR material is a mixed-valence copper-oxide perovskite, such as, but not limited to YBCO. In some implementations of the invention, the modifying material is a conductive material that bonds easily to oxygen, such as, but not limited to, chromium.

1 - 25 . (canceled) 
     
     
         26 . An ELR film comprising:
 a first layer comprised of an ELR material; and   a second layer comprised of a modifying material bonded to the ELR material of the first layer, wherein the ELR film has an improved operational characteristic over the operational characteristics of the ELR material without the modifying material.   
     
     
         27 . The ELR film of  claim 26 , wherein the improved operational characteristic comprises a higher transition temperature. 
     
     
         28 . The ELR film of  claim 26 , further comprising a third layer comprised of a substrate material. 
     
     
         29 . The ELR film of  claim 28 , wherein the first layer is adjacent the substrate layer. 
     
     
         30 . The ELR film of  claim 28 , wherein the second layer is adjacent the substrate layer. 
     
     
         31 . The ELR film of  claim 26 , further comprising a buffer or an insulating layer. 
     
     
         32 . The ELR film of  claim 31 , wherein the first layer is adjacent the buffer or the insulating layer. 
     
     
         33 . The ELR film of  claim 31 , wherein the second layer is adjacent the buffer or the insulating layer. 
     
     
         34 . The ELR film of  claim 26 , further comprising a third layer of ELR material bonded to the second layer. 
     
     
         35 . The ELR film of  claim 26 , further comprising a third layer of modifying material bonded to the first layer. 
     
     
         36 . The ELR film of  claim 28 , wherein the substrate material comprises a polycrystalline material, a polycrystalline metal, an alloy, a Hastelloy metal, a Haynes metal, or an Inconel metal. 
     
     
         37 . The ELR film of  claim 26 , wherein the modifying material comprises chromium, copper, bismuth, cobalt, vanadium, titanium, rhodium, beryllium, gallium, selenium, or other material. 
     
     
         38 . The ELR film of  claim 26 , wherein the ELR material comprises a superconducting material. 
     
     
         39 . The ELR film of  claim 38 , wherein the superconducting material comprises a mixed-valence copper-oxide perovskite. 
     
     
         40 . The ELR film of  claim 38 , wherein the superconducting material comprises an iron pnictide material.