Magnetic memory device and method of manufacturing the same

Abstract

Magnetic memory devices and methods of manufacturing the same are disclosed. A method may include forming a magnetic tunnel junction layer on a substrate, forming mask patterns on the magnetic tunnel junction layer, and sequentially performing a plurality of ion implantation processes using the mask patterns as ion implantation masks to form an isolation region in the magnetic tunnel junction layer. The isolation region may thereby define magnetic tunnel junction parts that are disposed under corresponding ones of the mask patterns. A magnetic memory device may include a plurality of magnetic tunnel junction parts electrically and magnetically isolated from each other through the isolation region.

What is claimed is: 
     
         1 . A magnetic memory device comprising:
 a magnetic tunnel junction layer disposed on a substrate;   an isolation region formed in the magnetic tunnel junction layer, the isolation region defining magnetic tunnel junction parts spaced apart from each other; and   mask patterns disposed on corresponding ones of the magnetic tunnel junction parts,   wherein the isolation region includes first impurities, second impurities different from the first impurities, and an element that is the same as at least one of the elements included in the magnetic tunnel junction part.   
     
     
         2 . The magnetic memory device of  claim 1 , wherein the first impurities impart a magnetic isolation property to the isolation region, and
 wherein the second impurities impart an electrical isolation property and a magnetic isolation property to the isolation region.   
     
     
         3 . The magnetic memory device of  claim 1 , further comprising:
 lower electrodes disposed under corresponding ones of the magnetic tunnel junction parts,   wherein the isolation region extends between the lower electrodes, and   wherein at least a lower portion of the isolation region further includes an element that is the same element as the lower electrode.   
     
     
         4 . The magnetic memory device of  claim 1 , wherein the mask patterns include corresponding upper electrodes, and
 wherein each of the upper electrodes is in contact with a top surface of the corresponding magnetic tunnel junction part.   
     
     
         5 . The magnetic memory device of  claim 4 , wherein each of the upper electrodes includes a conductive barrier pattern and a metal pattern which are sequentially stacked. 
     
     
         6 . The magnetic memory device of  claim 1 , wherein a top surface of the isolation region is lower than a top surface of the magnetic tunnel junction part. 
     
     
         7 . A magnetic memory device comprising:
 a magnetic tunnel junction layer arranged on a substrate;   a plurality of mask patterns separated from each other and arranged over the magnetic tunnel junction layer to cover separate magnetic tunnel junction parts;   an isolation region formed between the magnetic tunnel junction parts to electrically and magnetically isolate the magnetic tunnel junction parts from each other.   
     
     
         8 . The magnetic memory device of  claim 7 , wherein the isolation region comprises first impurities imparting a magnetic isolation property to the isolation region, and second impurities imparting electrical and magnetic isolation properties to the isolation region. 
     
     
         9 . The magnetic memory device of  claim 8 , wherein the isolation region further comprises an element that is the same as at least one of the elements included in the magnetic tunnel junction part. 
     
     
         10 . The magnetic memory device of  claim 7 , further comprising lower electrodes arranged beneath corresponding ones of the magnetic tunnel junction parts, wherein the lower electrodes are isolated from each other by the isolation region.