Circuits, methods, and media for detecting and countering aging degradation in memory cells

Abstract

Circuits for estimating threshold voltages of transistors in memory device bitcells are provided. The circuits use a multiplexer, a sensor switch network, a power switch network, and an NMOS device configured as a sensor to couple a desired one the transistors in the bitcells and the NMOS device to each other, to a test voltage, and to ground. A sensor voltage node can then be measured, and based on the resulting measurement, a threshold voltage for the transistor estimate.

What is claimed is: 
     
         1 . A circuit for measuring threshold voltages of transistors in a memory device bitcell, comprising:
 a multiplexer that has a plurality of pairs of inputs, each connected to a different pair of bitlines of the memory device, and that has an output connected to a pair of bitline terminals;   a first plurality of interconnected switches that are connected to a ground, a test voltage, a sense voltage node (V sEN ), the pair of bitline terminals, and a pair of sensor terminals;   a second plurality of interconnected switches that are connected to the test voltage, the ground, the sense voltage node (V sEN ), a positive voltage connection, an n-well connection, and a ground power connection of the bitcell; and   a zero-V TH  thick-oxide NMOS transistor having a gate, a drain, and a source, wherein the gate is connected to the source, the source is connected to the gate and one of the pair of sensor terminals; and the drain is connected to another of the pair of sensor terminals,   wherein, when in a first configuration of the multiplexer, the first plurality of interconnected switches, and the second plurality of interconnected switches, a gate of a first transistor of the bitcell and one of a drain and a source of the first transistor of the bitcell are coupled to the test voltage, another of the drain and the source of the first transistor of the bitcell is coupled to the drain of the zero-V TH  thick-oxide NMOS transistor, and the gate and the source of the zero-V TH  thick-oxide NMOS transistor are coupled to ground.