Optoelectronic device

Abstract

The invention relates to an optoelectronic device ( 101 ), comprising: a semiconductor layer sequence ( 103 ) comprising an emitter layer ( 105 ) for emitting electromagnetic radiation, a converter ( 113 ) for converting electromagnetic radiation with a first wavelength into an electromagnetic radiation with a second wavelength which differs from the first wavelength, a scattering body ( 109 ) for scattering at least a part of the electromagnetic radiation emitted by the emitter layer ( 105 ) in the direction of the converter ( 113 ) in order to convert at least a part of the emitted electromagnetic radiation, wherein the scattering body ( 109 ) comprises a positive, temperature-dependent scattering cross-section and so, as the temperature increases, scattering of the electromagnetic radiation in the scattering body ( 109 ) in the direction of the converter can be increased. The invention also relates to a scattering body ( 109 ).

1 . Scattering body for scattering electromagnetic radiation for an optoelectronic device, wherein the scattering body has a positive, temperature-dependent scattering cross-section and so as the temperature increases, scattering of the electromagnetic radiation in the scattering body can be increased, wherein the scattering body comprises at least one scattering region and a plurality of non-scattering regions, wherein the scattering region has a positive, temperature-dependent scattering cross-section, wherein the non-scattering regions are transparent for the emitted electromagnetic radiation. 
     
     
         2 . Scattering body according to  claim 1 , wherein the at least one scattering region is formed above a converter. 
     
     
         3 . Scattering body according to  claim 2 , wherein the converter is embodied as a converter layer, wherein the scattering region is rectangular as seen in cross-section and has a width equal to the width of the converter layer. 
     
     
         4 . Scattering body according to  claim 1 , wherein to the left and right next to the scattering region in cross-section the non-scattering regions are disposed. 
     
     
         5 . Scattering body according to  claim 1 , wherein the at least one scattering region is formed above a converter,
 wherein the converter is embodied as a converter layer, wherein the scattering region is rectangular as seen in cross-section and has a width equal to the width of the converter layer, wherein to the left and right next to the scattering region in cross-section the non-scattering regions are disposed.   
     
     
         6 . Scattering body according to  claim 1 , wherein the non-scattering region is formed above the converter. 
     
     
         7 . Scattering body according to  claim 6 , wherein the converter is embodied as a converter layer, wherein the non-scattering region is rectangular as seen in cross-section and has a width equal to the width of the converter layer. 
     
     
         8 . Scattering body according to  claim 1 , wherein to the left and right next to the non-scattering region in cross-section the scattering regions are disposed. 
     
     
         9 . Scattering body according to  claim 1 , wherein the scattering region comprises a matrix material of silicone and scattering particles. 
     
     
         10 . Scattering body according to  claim 1 , wherein the non-scattering regions comprise a matrix material of silicone and no scattering particles. 
     
     
         11 . Scattering body according to  claim 1 , wherein the scattering particles are formed by glass, BaF 2 , LiF or MgF 2 . 
     
     
         12 . Scattering body according to  claim 1 , wherein the matrix material of the scattering region is identical to the matrix material of the non-scattering regions. 
     
     
         13 . Scattering body according to  claim 1 , wherein the matrix material is dialkyl polysiloxane. 
     
     
         14 . Scattering body according to  claim 1 , wherein the non-scattering region is formed above a converter,
 wherein the converter is embodied as a converter layer,   wherein the non-scattering region is rectangular as seen in cross-section and has a width equal to the width of the converter layer,   wherein to the left and right next to the non-scattering region in cross-section the scattering regions are disposed.   
     
     
         15 . Scattering body according to  claim 1 , wherein a radiation-permeable matrix material with a first refraction index and scattering particles embedded therein and having a second refraction index are formed, wherein a difference between the first and the second refraction index can be increased as the temperature increases and so as the temperature increases, scattering of electromagnetic radiation in the scattering body can be increased.