Atomic layer epitaxy for semiconductor gate stack layer for advanced channel devices

Abstract

Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser radiation to clean, anneal, and/or activate the surface of the substrate. The substrate is then exposed to a deposition precursor in a self-limiting deposition process. The substrate may again be exposed to pulsed laser radiation, and then exposed to a second deposition precursor in a second self-limiting deposition process. The process may be repeated as desired to form an epitaxial layer of very high quality one atomic layer at a time.

What is claimed is: 
     
         1 . An apparatus, comprising:
 a processing chamber having a side wall and a bottom wall;   an x-y actuator coupled to the bottom wall of the processing chamber;   a substrate support disposed in the processing chamber, the substrate support having a processing surface and a support shaft disposed through the bottom wall and the x-y actuator;   a source of pulsed laser radiation facing the processing surface;   a window coupled to the processing chamber and separating the processing surface from the source of laser radiation; and   a gas injector between the processing surface and the window.   
     
     
         2 . The apparatus of  claim 1 , wherein the window is coupled to the side wall of the processing chamber, and the gas injector is disposed through the side wall of the processing chamber. 
     
     
         3 . The apparatus of  claim 1 , wherein the processing chamber further comprises a lid adjacent to the side wall of the processing chamber, the lid comprising:
 a sealing surface operatively coupled to the side wall of the processing chamber; and   a tunnel disposed in a central portion of the lid, the tunnel having an opening through the sealing surface and an end opposite the opening, wherein the window is coupled to the end of the tunnel.   
     
     
         4 . The apparatus of  claim 3 , further comprising a gas seal between the side wall of the processing chamber and the sealing surface of the lid. 
     
     
         5 . The apparatus of  claim 2 , further comprising an exhaust disposed through the side wall of the processing chamber opposite the gas inlet. 
     
     
         6 . The apparatus of  claim 1 , wherein the source of pulsed laser radiation comprises a plurality of solid state lasers, and the laser radiation has an intensity non-uniformity of less than about 10%. 
     
     
         7 . The apparatus of  claim 1 , wherein the substrate support comprises a heating element. 
     
     
         8 . The apparatus of  claim 3 , wherein the side wall has a gas groove facing the sealing surface. 
     
     
         9 . The apparatus of  claim 8 , wherein the gas groove is coupled to an inlet conduit through the side wall. 
     
     
         10 . An apparatus, comprising:
 a processing chamber having a side wall and a bottom wall;   an x-y actuator coupled to the bottom wall of the processing chamber;   a substrate support disposed in the processing chamber, the substrate support having a processing surface and a support shaft disposed through the bottom wall and the x-y actuator;   a source of pulsed laser radiation facing the processing surface;   a window coupled to the processing chamber and separating the processing surface from the source of laser radiation;   a lid with a sealing surface operatively coupled to the side wall; and   a gas injector between the processing surface and the window.   
     
     
         11 . The apparatus of  claim 10 , wherein the window is coupled to the side wall of the processing chamber, and the gas injector is disposed through the side wall of the processing chamber. 
     
     
         12 . The apparatus of  claim 10 , wherein the window is coupled to the side wall of the processing chamber, and the gas injector is disposed through the side wall of the processing chamber. 
     
     
         13 . The apparatus of  claim 10 , wherein the lid also has a tunnel disposed in a central portion of the lid, the tunnel having an opening through the sealing surface and an end opposite the opening, wherein the window is coupled to the end of the tunnel, and a sealing member is disposed between the window and the tunnel. 
     
     
         14 . The apparatus of  claim 13 , wherein the side wall has a gas groove facing the sealing surface. 
     
     
         15 . The apparatus of  claim 14 , wherein the gas groove is coupled to an inlet conduit through the side wall. 
     
     
         16 . The apparatus of  claim 12 , wherein the source of pulsed laser radiation comprises a plurality of solid state lasers, and the laser radiation has an intensity non-uniformity of less than about 10%. 
     
     
         17 . The apparatus of  claim 16 , wherein the substrate support comprises a heating element. 
     
     
         18 . An apparatus, comprising:
 a processing chamber having a side wall and a bottom wall;   an x-y actuator coupled to the bottom wall of the processing chamber;   a substrate support disposed in the processing chamber, the substrate support having a processing surface and a support shaft disposed through the bottom wall and the x-y actuator, the substrate support also including a heating element;   a source of pulsed laser radiation facing the processing surface;   a window coupled to the processing chamber and separating the processing surface from the source of laser radiation;   a lid with a sealing surface operatively coupled to the side wall, a tunnel disposed in a central portion of the lid, the tunnel having an opening through the sealing surface and an end opposite the opening, wherein the window is coupled to the end of the tunnel, and a sealing member is disposed between the window and the tunnel; and   a gas injector between the processing surface and the window.   
     
     
         19 . The apparatus of  claim 18 , wherein the side wall has a gas groove facing the sealing surface. 
     
     
         20 . The apparatus of  claim 19 , wherein the gas groove is coupled to an inlet conduit through the side wall.