US2017016131A1PendingUtilityA1

Growth method of dendritic crystal structure that provides directional heat transfer

Assignee: UNIV FAR EASTPriority: Jul 15, 2015Filed: Jul 15, 2015Published: Jan 19, 2017
Est. expiryJul 15, 2035(~9 yrs left)· nominal 20-yr term from priority
C25D 5/16C25D 7/00C25D 5/10C25D 3/38F28F 13/185C25D 5/605C25D 5/34C25D 5/617
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Claims

Abstract

A growth method of dendritic crystal structure that provides directional heat transfer, including the steps: A. providing a substrate, whereby the substrate is provided with a plurality of crystal defects; B. depositing a plurality of metal ions on the substrate using a deposition method, whereby the metal ions on the crystal defects enable the growth of dendritic crystals. Moreover, an interspace is provided between each of the dendritic crystals. Hence, when the substrate is in contact with a heat source, heat energy is transferred from the substrate in the growth direction of the dendritic crystals; or, when the dendritic crystals are disposed at the position of a heat source, heat provided by the heat source is transferred from the dendritic crystals in a direction toward the substrate. Accordingly, the fractal structure of the dendritic crystals is used to provide ample heat dissipation areas and contact areas.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A growth method of dendritic crystal structure that provides directional heat transfer, comprising the following steps:
 a) providing a substrate, whereby the substrate is provided with a plurality of crystal defects separated at intervals;   b) depositing a plurality of metal ions on the substrate using a deposition method, whereby the metal ions on the crystal defects enable the growth of dendritic crystals, and an interspace is provided between each of the dendritic crystals.   
     
     
         2 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein in step (a), processing is carried out on the substrate to form the crystal defects. 
     
     
         3 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 2 , wherein the processing includes a cutting process. 
     
     
         4 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein in step (a), the substrate is plated with a whisker layer, and material of the coated whisker layer is any or a combination of tin, cadmium, zinc, antimony, or indium; the plurality of whiskers formed on the substrate serve as crystal defects. 
     
     
         5 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein in step (b), the substrate serves as an electrode for electroplating, wherein the electroplating current density is 1 A/dm 2 ˜5 A/dm 2 , and the electroplating time is 60 min˜180 min. 
     
     
         6 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein a length of the dendritic crystals is 0.1 mm˜15 mm. 
     
     
         7 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein a length of the dendritic crystals is 1 mm˜5 mm. 
     
     
         8 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein the interspace between each of the dendritic crystals is at least 0.1 mm˜0.5 mm. 
     
     
         9 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein in step (a), a cover member having poor electrical conductivity is disposed at a predetermined position on the substrate, thereby preventing the growth of dendritic crystals at the predetermined position. 
     
     
         10 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein density of dendritic crystals on the substrate is 3/cm 2 ˜15/cm 2 . 
     
     
         11 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein the substrate is an electrically conductive metal; in step (b), the substrate is first cleaned through pre-processing; the pre-processing includes a degreasing procedure used to remove grease and a sensitization procedure; the sensitization procedure includes soaking the substrate in an acidic solution to increase adhesion effect of the metal ions when carrying out electroplating. 
     
     
         12 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , which further comprises a step (c), wherein the substrate and the dendritic crystals are plated with an anti-oxidation layer. 
     
     
         13 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 1 , wherein in step (b), the substrate serves as an electrode for electroplating, temperature condition for electroplating is 30° C.˜60° C., electroplating time is 2 hours, current density is 2.8 A/dm 2 ˜8 A/dm 2 , and the substrate is soaked in a copper plating solution with a pH value of 0˜2.5. 
     
     
         14 . The growth method of dendritic crystal structure that provides directional heat transfer according to  claim 13 , wherein in step (b), the substrate serves as an electrode for electroplating, the temperature condition for electroplating is 30° C.˜60° C., electroplating time is 2 hours, current density is 2.8 A/dm 2 ˜8 A/dm 2 , and the substrate is soaked in in a copper plating solution with a pH value of 1.45 and a specific weight of 1.190.

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