W-ni sputtering target

Abstract

A sputtering target contains 45 to 75 wt % W and a remainder of Ni and common impurities. The sputtering target contains a Ni(W) phase, a W phase and no or less than 10% intermetallic phases. A process for producing a W—Ni sputtering target and a process of using the sputtering target are also provided.

1 - 15 . (canceled) 
     
     
         16 . A sputtering target, comprising:
 from 45 to 75% by weight of W and a balance of Ni and normal impurities; and   a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section.   
     
     
         17 . The sputtering target according to  claim 16 , which further comprises an oxygen content of less than 100 μg/g. 
     
     
         18 . The sputtering target according to  claim 16 , which further comprises a hardness of less than 500 HV10. 
     
     
         19 . The sputtering target according to  claim 16 , wherein the sputtering target is a tubular sputtering target. 
     
     
         20 . The sputtering target according to  claim 16 , wherein the sputtering target is a one-piece tubular target. 
     
     
         21 . The sputtering target according to  claim 16 , which further comprises a proportion by area of the W phase measured at the target material cross section in a range of from 15% to 45%. 
     
     
         22 . The sputtering target according to  claim 16 , which further comprises an average grain size of the W phase of less than 40 μm. 
     
     
         23 . The sputtering target according to  claim 16 , which further comprises a texture of <110> parallel to a main deformation direction in the Ni(W) phase. 
     
     
         24 . A process of using a sputtering target, the process comprising the following steps:
 using a sputtering target having from 45 to 75% by weight of W, a balance of Ni and normal impurities, a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section, for deposition of an electrochromic layer.   
     
     
         25 . A process of using of a sputtering target, the process comprising the following steps:
 using a sputtering target having from 45 to 75% by weight of W, a balance of Ni and normal impurities, a Ni(W) phase, a W phase and no or less than 10% by area on average of intermetallic phases measured at a target material cross section, for deposition of solar absorber layers, protective layers against high-temperature oxidation or diffusion barrier layers.   
     
     
         26 . A process for producing a W—Ni sputtering target using a powder-metallurgical route, the method comprising the following steps:
 carrying out a compacting step in which a powder mixture of W powder and Ni powder is compacted by application of pressure, heat or pressure and heat to give a resulting blank; and 
 carrying out a cooling step in which the resulting blank is cooled at a cooling rate of greater than 30 K/min at least in a temperature range of from 900 to 750° C. 
 
     
     
         27 . The process for producing a W—Ni sputtering target according to  claim 26 , which further comprises effecting the compacting step by sintering at temperatures of from 1100 to 1450° C. 
     
     
         28 . The process for producing a W—Ni sputtering target according to  claim 26 , which further comprises performing a thermomechanical or thermal treatment of the blank between the compacting step and the cooling step. 
     
     
         29 . The process for producing a W—Ni sputtering target according to  claim 28 , which further comprises performing the thermomechanical or thermal treatment at temperatures in a range of from 970 to 1450° C. 
     
     
         30 . The process for producing a W—Ni sputtering target according to  claim 28 , wherein the thermomechanical or thermal treatment includes at least one forging step.