Electronic device comprising nanogap electrodes and nanoparticles

Abstract

An electronic device includes a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle. A method of manufacturing the electronic device and the use of the electronic device in photodetector, transistor, phototransistor, optical modulator, electrical diode, photovoltaic cell or electroluminescent component are also described.

1 - 16 . (canceled) 
     
     
         17 . An electronic device comprising a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle. 
     
     
         18 . The electronic device according to  claim 17 , wherein the at least one nanoparticle has an overlap area with each of the at least two electrodes higher than 1% of the area of the at least one nanoparticle. 
     
     
         19 . The electronic device according to  claim 17 , wherein the nanogap has a size (d) ranging from 0.1 nanometer to 1 000 nanometers. 
     
     
         20 . The electronic device according to  claim 17 , wherein the nanogap has a length (L) ranging from 1 nanometer to 10 millimeters. 
     
     
         21 . The electronic device according to  claim 17 , wherein the at least one nanoparticle is a large quantum dot, a nanosheet, a nanorod, a nanoplatelet, a nanoplate, a nanowall, a nanodisk, a nanotube, a nanoribbon, a nanobelt or a nanowire. 
     
     
         22 . The electronic device according to  claim 17 , wherein the at least one nanoparticle is a semiconductor nanoplatelet. 
     
     
         23 . The electronic device according to  claim 17 , further comprising an electrolyte on the at least one nanoparticle. 
     
     
         24 . A method of manufacturing an electronic device, said electronic device comprising a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle; the method comprising the steps of:
 a) formation on a substrate of at least two electrodes spaced by a nanogap ranging from 0.1 nanometer to 1 000 nanometers;   b) preparation of colloidal nanoparticles;   c) nanoparticle's ligand exchange procedure;   d) deposition of at least one nanoparticle onto the nanogap wherein the at least one nanoparticle has an overlap area with the at least two electrodes spaced by a nanogap higher than 2% of the area of the at least one nanoparticle;   e) nanoparticle's ligand exchange procedure if not performed at step c); and   f) deposition of an electrolyte.   
     
     
         25 . The method of manufacturing an electronic device according to  claim 24 , wherein the method of formation on a substrate of at least two electrodes spaced by a nanogap is selected from electromigration, electrodeposition, mechanically controlled break junctions, e-beam lithography, self-alignment methods, lift-off methods, shadowing methods, on-wire lithography, nanotube masks. 
     
     
         26 . The method of manufacturing an electronic device according to  claim 24 , wherein the method of deposition of at least one nanoparticle onto the nanogap is selected from drop casting, spin coating, dip coating, spray casting, screen printing, inkjet printing, sputtering techniques, evaporation techniques, electrophoretic deposition, gravure printing, flexographic printing or vacuum methods. 
     
     
         27 . The method of manufacturing an electronic device according to  claim 24 , wherein the nanoparticle is a semiconductor nanoplatelet. 
     
     
         28 . The electronic device according to  claim 17 , wherein a pn junction is formed between the at least two electrodes. 
     
     
         29 . A product comprising the electronic device, said electronic device comprising a substrate and at least two electrodes spaced by a nanogap, wherein the at least two electrodes are bridged by at least one nanoparticle and wherein the at least one nanoparticle has an overlap area with the at least two electrodes higher than 2% of the area of the at least one nanoparticle; wherein the product is a photodetector, a transistor, a phototransistor, an optical modulator, an electrical diode, a light-emitting diode, a laser, a photovoltaic solar cell or an electroluminescent component.