Method for forming structures in a solar cell

Abstract

A conductive contact pattern is formed on a surface of solar cell by forming a thin conductive layer over at least one lower layer of the solar cell, and ablating a majority of the thin conductive layer using a laser beam, thereby leaving behind the conductive contact pattern. The laser has a top-hat profile, enabling precision while scanning and ablating the thin layer across the surface. Heterocontact patterns are also similarly formed.

What is claimed is: 
     
         1 . A method comprising forming a contact pattern on a surface of a solar cell, the solar cell comprising a textured semiconductor substrate, the forming comprising:
 forming at least one film layer of a layer of the solar cell, the at least one film layer comprising a material having an ablation threshold;   irradiating a first portion of the at last one film layer with a laser, without irradiating a second portion of the at least one film layer, the laser having an intensity profile of a non-Gaussian top-hat laser beam, and the irradiating ablating the entire first portion of the at least one film layer, leaving the second portion of the at least one film layer as the contact pattern, the laser being operated at a fluence near or at the ablation threshold of the material of the at least one film layer;   wherein the texture semiconductor substrate comprises a random pyramid-shaped texture.   
     
     
         2 . The method of  claim 1 , further comprising forming self-aligned metallization on the contact pattern. 
     
     
         3 . The method of  claim 1 , wherein the material of the at least one film layer comprises a conductive material, and the contact pattern is a conductive contact pattern. 
     
     
         4 . The method of  claim 3 , wherein the at least one film layer comprises at least one film layer of a plurality of film layers, and wherein the forming comprises forming a plurality of film layers, the plurality of film layers comprising at least one film layer, wherein at least two film layers of the plurality of film layers comprise different conductive materials. 
     
     
         5 . The method of  claim 3 , wherein the conductive contact pattern comprises a plurality of conductive fingers having a width of approximately 50 μm or less. 
     
     
         6 . The method of  claim 1 , wherein the material of the at least one film layer comprises a semiconductor material, and the contact pattern is a hetero-contact pattern. 
     
     
         7 . The method of  claim 6 , wherein the semiconductor material further comprises a conductive dopant. 
     
     
         8 . The method of  claim 6 , wherein the at least one film layer comprises at least one film layer of a plurality of film layers, and wherein the forming comprises forming a plurality of film layers, the plurality of film layers comprising at least one film layer, wherein at least two film layers of the plurality of film layers comprise different semiconductor materials. 
     
     
         9 . The method of  claim 6 , wherein the hetero-contract pattern comprises a plurality of at least partially conductive fingers having a width of approximately 50 μm or less. 
     
     
         10 . The method of  claim 1 , wherein the non-Gaussian top-hat laser beam is projected through a mask. 
     
     
         11 . The method of  claim 10 , wherein the mask shapes the laser beam into a regular polygon. 
     
     
         12 . The method of  claim 10 , wherein the mask shapes the laser beam into a regular polygon obstructed by a thin line running across the regular polygon. 
     
     
         13 . The method of  claim 1 , wherein the non-Gaussian top-hat laser beam is projected through multiple masks or a dynamically changing mask. 
     
     
         14 . The method of  claim 1 , wherein the first portion of the film layer ablated by the non-Gaussian top-hat laser beam comprises more than 80% of the film layer.