High-speed filling method for copper

Abstract

To provide a technique of increasing a rate of filling holes or grooves formed in a substrate, by changing the temperature, the concentration, the current density, and the other conditions of the ordinary copper plating. A method for filling holes or grooves formed in a substrate by copper plating at a high speed, containing: immersing the substrate having the holes or grooves in an acidic copper plating solution containing a copper ion, a sulfate ion, and a halide ion, at from 30 to 70° C.; and plating the substrate at a current density of 3 A/dm 2 or more by using an insoluble electrode as an anode.

1 . A method for filling holes or grooves formed in a substrate by copper plating at a high speed, comprising: immersing the substrate having the holes or grooves in an acidic copper plating solution containing a copper ion, a sulfate ion, and a halide ion, at from 30 to 70° C.; and plating the substrate at a current density of 3 A/dm 2  or more by using an insoluble electrode as an anode. 
     
     
         2 . The method for filling holes or grooves formed in a substrate by copper plating at a high speed according to  claim 1 , wherein the copper ion contained in the acidic copper plating solution is 25 g/L or more and the saturation copper ion concentration at a temperature of from 30 to 70° C. of the solution temperature of the copper plating solution or less, the sulfate ion is 50 g/L or more, and the halide ion is from 5 to 500 mg/L. 
     
     
         3 . The method for filling holes or grooves formed in a substrate by copper plating at a high speed according to  claim 1 , wherein the copper ion contained in the acidic copper plating solution is the saturation copper ion concentration at 20° C. of the solution temperature of the copper plating solution or more and the saturation copper ion concentration at a temperature of from 30 to 70° C. of the solution temperature of the copper plating solution or less, the sulfate ion is 50 g/L or more, and the halide ion is from 5 to 500 mg/L. 
     
     
         4 . The method for filling holes or grooves formed in a substrate by copper plating at a high speed according to  claim 1 , wherein the acidic copper plating solution further contains a brightener and a leveler. 
     
     
         5 . The method for filling holes or grooves formed in a substrate by copper plating at a high speed according to  claim 1 , wherein the halide ion is a chloride ion.