US2017051433A1PendingUtilityA1

Method for producing silicon-ingots

Assignee: SOLARWORLD AMERICAS INCPriority: Oct 21, 2013Filed: Nov 2, 2016Published: Feb 23, 2017

Est. expiryOct 21, 2033(~7.3 yrs left)· nominal 20-yr term from priority

Inventors:Nathan Stoddard

C30B 11/02C30B 29/06C30B 11/14

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Claims

Abstract

Method for producing silicon-ingots ( 1 ) including the following steps: providing a silicon melt ( 3 ), growing a block ( 2 ) of silicon from the silicon melt ( 3 ), the block ( 2 ) having a predetermined crystal orientation, cutting the block ( 2 ) along at least one cutting plane ( 16, 17, 18 ) into a number of silicon-ingots ( 1 ).

Claims

exact text as granted — not AI-modified

What is claimed is:

1 . A silicon block comprising:
a length of at least 400 mm measured in a growth direction; and a cross sectional area of at least 320 mm×320 mm, wherein silicon of the block has an interstitial oxygen content of less than 5×10 16 atoms per cm 3 , wherein the silicon of the block has a nitrogen content of less than 1×10 15 atoms per cm 3 .

2 . A silicon block according to claim 1 , wherein the growth direction is parallel to one of the following directions: &lt;100&gt;, &lt;110&gt; and &lt;111&gt;.

3 . A silicon block according to claim 1 , wherein side faces of the block have normals which are oriented parallel to one of the following directions: &lt;100&gt;, &lt;110&gt; and &lt;111&gt;.

4 . A silicon block according to claim 1 , wherein said length measured in said growth direction is an integer multiple of 156 mm.

5 . A silicon block according to claim 1 , wherein said block displays a monocrystalline structure in at least 50% of its volume.

6 . A silicon block according to claim 1 , wherein said block has a constant density of dislocations along its entire growth direction.

7 . A silicon block according to claim 6 , wherein said dislocation density is less than 10 −4 cm −2 .

8 . A silicon block according to claim 1 , wherein the block has a rectangular cross section.

9 . A silicon block according to claim 8 , wherein a side length of said cross section is an integer multiple of 156 mm.

10 . A silicon block according to claim 9 , wherein another side length of said cross section is around 500 mm.

11 . A silicon block comprising:
a block structure comprising silicon, a length of at least 400 mm measured in a grow direction and a cross sectional area of at least 320 mm×320 mm, said silicon having an interstitial oxygen content of less than 5×10 16 atoms per cm 3 and a nitrogen content of less than 1×10 15 atoms per cm 3 .

12 . A silicon block according to claim 11 , wherein the growth direction is parallel to one of the following directions: &lt;100&gt;, &lt;110&gt; and &lt;111&gt;.

13 . A silicon block according to claim 11 , wherein side faces of the block have normals which are oriented parallel to one of the following directions: &lt;100&gt;, &lt;110&gt; and &lt;111&gt;.

14 . A silicon block according to claim 11 , wherein said length measured in said growth direction is an integer multiple of 156 mm.

15 . A silicon block according to claim 11 , wherein said block displays a monocrystalline structure in at least 50% of its volume.

16 . A silicon block according to claim 11 , wherein said block has a constant density of dislocations along its entire growth direction.

17 . A silicon block according to claim 16 , wherein said dislocation density is less than 10 −4 cm −2 .

18 . A silicon block according to claim 11 , wherein the block has a rectangular cross section.

19 . A silicon block according to claim 18 , wherein a side length of said cross section is an integer multiple of 156 mm.

20 . A silicon block according to claim 19 , wherein another side length of said cross section is around 500 mm.

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