US2017054040A1PendingUtilityA1

Method For Producing a Solar Cell, in Particular a Silicon Thin-Film Solar Cell

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Assignee: LILAS GMBHPriority: Jul 24, 2013Filed: Nov 8, 2016Published: Feb 23, 2017
Est. expiryJul 24, 2033(~7 yrs left)· nominal 20-yr term from priority
C03C 2217/94C03C 23/004C03C 2218/31Y02E10/547C03C 17/3482Y02E10/546H01L 31/1804H01L 31/02366H01L 31/1884H10F 71/1221H10F 71/138H10F 71/131H10F 71/121H10F 19/80H10F 10/14H10F 77/707H10F 71/00Y02P70/50
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Abstract

A method for producing a solar cell, in particular a silicon thin-film solar cell, wherein a TCO layer ( 3 ) is applied to a glass substrate ( 1 ) and at least one silicon layer ( 4, 5 ) is applied to the TCO layer ( 3 ). Before the TCO layer ( 3 ) is applied, electron radiation is applied to the glass substrate ( 1 ), such that a light-scattering layer ( 2 ) of the glass substrate ( 1 ) is produced, to which light-scattering layer the TCO layer ( 3 ) is applied. Alternatively or additionally, a first silicon layer ( 4 ) may be applied to the TCO layer ( 3 ), a laser radiation or electron radiation may be applied to the first silicon layer ( 4 ), and a second silicon layer ( 5 ) may be applied to the irradiated first silicon layer ( 4 ).

Claims

exact text as granted — not AI-modified
1 . A method for producing a silicon thin-film solar cell, comprising the following method steps:
 depositing a TCO layer ( 3 ) on a glass substrate ( 1 );   depositing a first silicon layer ( 4 ) on the TCO layer ( 3 ):   exposing the first silicon layer ( 4 ) to laser radiation or electron radiation; and   depositing a second silicon layer ( 5 ) on the irradiated first silicon layer ( 4 );   wherein the second silicon layer ( 5 ) is deposited at temperatures below 300° C.

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