US2017066001A1PendingUtilityA1

Film formation method and film formation apparatus for thin film

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Assignee: SHINCRON CO LTDPriority: May 23, 2014Filed: May 1, 2015Published: Mar 9, 2017
Est. expiryMay 23, 2034(~7.9 yrs left)· nominal 20-yr term from priority
B05B 16/60C03C 2218/15B05D 3/0493B05D 5/083B05B 17/04B05D 2203/35B05B 13/0221C03C 2217/76B05B 9/04B05B 14/20C03C 17/30B05D 1/02B05B 15/1222
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Claims

Abstract

A method for forming a thin film having durability at a low cost is provided. A film formation apparatus 1 is used in the film formation method. The apparatus 1 comprises a vacuum container 11 , in which a substrate 100 is placed at a lower part, a vacuum pump 15 for exhaust inside the container 11 , a storage container 23 for storing a coating agent 21 provided outside the container 11 , a nozzle having an ejection part 19 capable of ejecting the coating agent 21 at its one end and a pressurizing means (a gas supply source 29 , etc.) for pressurizing a liquid surface of a coating agent 21 stored in the storage container 23 . A solution, which includes two or more kinds of materials including a first material (S 1 ) and a second material (S 2 ) having a higher vapor pressure (P 2 ) than a vapor pressure (P 1 ) of the S 1 and has a concentration of the first material being 0.01 wt % or more, is used as the coating agent 21 . The coating agent 21 is ejected to a substrate in an atmosphere with a pressure of P 2 or higher (excepting pressures higher than P 2 by one digit or more) and with an ejection pressure of 0.05 to 0.3 MPa.

Claims

exact text as granted — not AI-modified
1 . A film formation method for forming a thin film on a substrate in a vacuum, wherein a solution, which is composed of two or more kinds of materials including a first material (S 1 ) and a second material (S 2 ) having a higher vapor pressure (P 2 ) than a vapor pressure (P 1 ) of the S 1  and has a concentration of the first material being 0.01 wt % or more, is ejected to a substrate in an atmosphere with a pressure of P 2  or higher (excepting pressures higher than P 2  by one digit or more) and with an ejection pressure of 0.05 to 0.3 MPa. 
     
     
         2 . The film formation method according to  claim 1 , wherein film formation is performed by an inline type having a conveying mechanism. 
     
     
         3 . A film formation apparatus used for forming a thin film on a substrate in a vacuum, comprising
 a vacuum container wherein a substrate as a film formation subject is placed,   an exhaust means for exhausting inside the vacuum container,   a storage container for storing a solution, which is composed of two or more kinds of materials including a first material (S 1 ) and a second material (S 2 ) having a higher vapor pressure (P 2 ) than a vapor pressure (P 1 ) of the S 1  and has a concentration of the first material being 0.01 wt % or more,   a nozzle for ejecting the solution to the substrate; and   a pressurizing means for pressurizing a surface of a liquid stored in the storage container;   wherein it is configured that the solution is ejected from the nozzle by pressurizing the surface of the liquid inside the storage container with 0.05 to 0.3 MPa when a pressure inside the vacuum container becomes a pressure of P 2  or higher (excepting pressures higher than P 2  by one digit or more).   
     
     
         4 . The film formation apparatus according to  claim 3 , being an inline type provided with a conveying mechanism for conveying a substrate.

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