Photovoltaic devices including mg-doped semiconductor films

Abstract

A photovoltaic cell can include a dopant in contact with a semiconductor layer.

1 - 26 . (canceled) 
     
     
         27 . A photovoltaic cell comprising: a transparent conductive layer; and a first semiconductor layer positioned over the transparent conductive layer, the first semiconductor layer comprising CdSe and magnesium. 
     
     
         28 . The photovoltaic cell of  claim 27 , wherein the first semiconductor layer is doped with magnesium. 
     
     
         29 . The photovoltaic cell of  claim 28 , wherein the first semiconductor layer has a first side that is doped with magnesium and positioned such that the first side is in direct physical contact with the transparent conductive layer. 
     
     
         30 . The photovoltaic cell of  claim 27 , wherein the first semiconductor layer has a thickness of between about 200-3000 Angstroms. 
     
     
         31 . The photovoltaic cell of  claim 28 , wherein first semiconductor layer includes 1-20% magnesium. 
     
     
         32 . The photovoltaic cell of  claim 27 , wherein the transparent conductive layer is positioned over a substrate. 
     
     
         33 . The photovoltaic cell of  claim 27 , further comprising a second semiconductor layer positioned over the first semiconductor layer. 
     
     
         34 . The photovoltaic cell of  claim 33 , wherein the second semiconductor layer comprises a group II-VI, III-V or IV semiconductor. 
     
     
         35 . The photovoltaic cell of  claim 33 , wherein the second semiconductor layer comprises CdTe. 
     
     
         36 . The photovoltaic cell of  claim 33 , wherein the second semiconductor layer is cadmium chloride-treated CdTe. 
     
     
         37 . The photovoltaic cell of  claim 27 , further comprising a capping layer positioned between the transparent conductive layer and the first semiconductor layer. 
     
     
         38 . The photovoltaic cell of  claim 37 , wherein the capping layer covers at least a portion of the transparent conductive layer. 
     
     
         39 . The photovoltaic cell of  claim 37 , wherein the capping layer comprises a material selected from the group consisting of silicon dioxide, dialuminum trioxide, titanium dioxide, and diboron trioxide. 
     
     
         40 . A method of manufacturing a photovoltaic cell comprising:
 providing a transparent conductive layer; and   depositing a first semiconductor layer over the transparent conductive layer, the first semiconductor layer comprising CdSe doped with magnesium.   
     
     
         41 . The method of  claim 40 , wherein a first side of the first semiconductor is doped with magnesium and posited such that the first side is in direct physical contact with the transparent conductive layer. 
     
     
         42 . The method of  claim 40 , further comprising depositing a capping layer between the transparent conductive layer and the first semiconductor layer. 
     
     
         43 . The method of  claim 42 , wherein the capping layer is deposited to cover at least a portion of the transparent conductive layer. 
     
     
         44 . The method of  claim 42 , wherein the capping layer comprises a material selected from the group consisting of silicon dioxide, dialuminum trioxide, titanium dioxide, and diboron trioxide. 
     
     
         45 . A system for generating electrical energy comprising:
 a transparent conductive layer;   a first semiconductor layer positioned over the transparent conductive layer, the first semiconductor layer comprising CdSe doped with magnesium;   a first electrical connection connected to the transparent conductive layer; and   a second electrical connection connected to a back metal electrode adjacent to a second semiconductor layer positioned over the first semiconductor layer.   
     
     
         46 . The photovoltaic cell of  claim 27 , wherein the first semiconductor layer has a first side that is doped with magnesium and positioned such that the first side is in direct physical contact with the transparent conductive layer.