Semiconductor device

Abstract

A semiconductor device used for conversion between light and electricity, comprising a semiconductor stack comprising an upper surface; and an upper electrode formed on the semiconductor stack and comprising a first linear electrode and second electrodes, wherein the first linear electrode is closer to a center of the upper surface than the second electrodes, wherein the first linear electrode has a width varying along a first direction thereof, and each of the second electrodes has a uniform width along a second direction thereof.

What is claimed is: 
     
         1 . A semiconductor device used for conversion between light and electricity, comprising:
 a semiconductor stack comprising an upper surface; and   an upper electrode formed on the semiconductor stack and comprising a first linear electrode and second electrodes, wherein the first linear electrode is closer to a center of the upper surface than the second electrodes, wherein the first linear electrode has a width varying along a first direction thereof, and each of the second electrodes has a uniform width along a second direction thereof.   
     
     
         2 . The semiconductor device of  claim 1 , wherein the second electrodes are parallel to each other. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the upper electrode further comprises a collector electrode on a side of the upper surface. 
     
     
         4 . The semiconductor device of  claim 3 , wherein the first linear electrode and the second electrodes are closer to the center of the upper surface than the collector electrode. 
     
     
         5 . The semiconductor device of  claim 3 , wherein the collector electrode comprises a first collector electrode and a second collector electrode away from the first collector electrode, and the first collector electrode is parallel to the second collector electrode. 
     
     
         6 . The semiconductor device of  claim 5 , wherein the first linear electrode and the second electrodes locate between the first collector electrode and the second collector electrode. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the upper electrode further comprises more than one first linear electrode, and the first linear electrodes are parallel with each other. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the width of the first linear electrode is larger than 50 μm. 
     
     
         9 . The semiconductor device of  claim 1 , further comprising an anti-reflective layer formed on the upper surface of the semiconductor stack, wherein the anti-reflective layer comprises a dielectric material. 
     
     
         10 . The semiconductor device of  claim 1 , wherein the semiconductor stack comprises a lower surface opposite to the upper surface, and a lower electrode is formed on the lower surface of the semiconductor stack. 
     
     
         11 . The semiconductor device of  claim 3 , wherein the second electrodes are directly connected to the collector electrode. 
     
     
         12 . The semiconductor device of  claim 1 , wherein the first linear electrode is connected to one of the second electrodes. 
     
     
         13 . The semiconductor device of  claim 1 , wherein the width of the first linear electrode in the center of the upper surface is smaller than that in an area near the center of the upper surface. 
     
     
         14 . A semiconductor device used for conversion between light and electricity, comprising:
 a semiconductor stack comprising an upper surface; and   an upper electrode comprising a first linear electrode and second electrodes, wherein the first linear electrode is closer to a center of the upper surface than the second electrodes, wherein the first linear electrode has a various width, and the second electrodes have a uniform pitch there between.   
     
     
         15 . The semiconductor device of  claim 14 , wherein the uniform pitch between the second electrodes is smaller than 300 μm. 
     
     
         16 . The semiconductor device of  claim 14 , wherein the second electrodes are parallel to each other. 
     
     
         17 . The semiconductor device of  claim 14 , wherein each of the second electrodes has a uniform width. 
     
     
         18 . The semiconductor device of  claim 14 , wherein the upper electrode further comprises a collector electrode on a side of the upper surface. 
     
     
         19 . The semiconductor device of  claim 14 , wherein the first linear electrode is connected to one of the second electrodes. 
     
     
         20 . The semiconductor device of  claim 14 , wherein a width of the first linear electrode in the center of the upper surface is smaller than that in an area near the center of the upper surface.