US2017095357A1PendingUtilityA1
Ultra-low fractional area coverage flow diverter for treating aneurysms and vascular diseases
Est. expiryMay 25, 2030(~3.9 yrs left)· nominal 20-yr term from priority
C23C 16/513C23C 16/402A61F 2/90C23C 28/345C23C 14/30C23C 28/321C23C 14/345A61F 2/07C23C 14/18C23C 14/5873C23C 14/0005C23C 14/34C23C 14/5806A61F 2230/0054A61F 2002/075A61L 31/14A61L 31/022A61F 2002/077A61F 2002/823C23C 14/185A61F 2002/068
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Abstract
The various embodiments described herein include methods for fabricating thin- film flow diversion apparatuses. In one aspect, a method includes: (1) creating a plurality of trenches using photolithography and deep reactive ion etching on a substrate; (2) depositing a metal sacrificial layer on the substrate; (3) forming a Nitinol layer with a plurality of fenestrations by depositing Nitinol on the metal sacrificial layer; (4) forming a thin-film of Nitinol by removing the metal sacrificial layer; (5) crystallizing the thin-film of Nitinol; and (6) elongating the thin-film of Nitinol.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for fabricating a thin-film flow diversion apparatus, comprising:
creating a plurality of trenches using photolithography and deep reactive ion etching on a substrate; depositing a metal sacrificial layer on the substrate; forming a Nitinol layer with a plurality of fenestrations by depositing Nitinol on the metal sacrificial layer; forming a thin-film of Nitinol by removing the metal sacrificial layer; crystallizing the thin-film of Nitinol; and elongating the thin-film of Nitinol.
2 . The method of claim 1 , wherein the substrate comprises a silicon substrate.
3 . The method of claim 1 , wherein depositing the metal sacrificial layer comprises depositing a copper sacrificial layer via e-beam evaporation.
4 . The method of claim 1 , further comprising depositing a silicon dioxide barrier layer by plasma-enhanced chemical vapor deposition on the metal sacrificial layer prior to the depositing of the Nitinol.
5 . The method of claim 1 , wherein the depositing of the Nitinol comprises depositing the Nitinol by a direct current sputtering process.
6 . The method of claim 1 , further comprising generating a super-hydrophilic surface on the thin-film of Nitinol utilizing hydrogen peroxide.
7 . The method of claim 6 , wherein the super-hydrophilic surface has a water contact angle of less than 5 degrees.
8 . The method of claim 6 , wherein the super-hydrophilic surface is configured to deter platelet adhesion at a rate of less than 3 parts per millimeter squared when subjected to platelet rich plasma for 3 or more hours.
9 . The method of claim 1 , wherein the Nitinol is deposited via direct current sputtering.
10 . The method of claim 1 , wherein the Nitinol is deposited via hot-target sputter deposition.
11 . The method of claim 1 , wherein crystallizing the thin-film of Nitinol comprises heating the thin-film within a vacuum.
12 . The method of claim 1 , wherein each fenestration of the plurality of fenestrations has a pore size of less than 500 microns.
13 . The method of claim 1 , wherein each fenestration of the plurality of fenestrations has a pore size between 200 microns and 400 microns.
14 . The method of claim 1 , wherein the thin-film flow diversion apparatus comprises a thin-film stent cover having a surface coverage of less than 30%.
15 . The method of claim 1 , wherein the fenestrations comprise diamond-shaped apertures.
16 . The method of claim 1 , wherein the thin-film has a thickness of less than 12 microns.Cited by (0)
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