High efficiency multijunction photovoltaic cells

Abstract

Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.

1 . A Ga 1-x In x N y As 1-y-z Sb z  subcell, wherein the internal quantum efficiency as a function of irradiance energy is characterized by,
 an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.30 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.30 eV;   an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.18 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.30 eV;   an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.10 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.18 eV;   an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.03 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.15 eV;   an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 0.99 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.15 eV; or   an internal quantum efficiency of at least 60% at an irradiance energy from 1.38 eV to 0.92 eV, an internal quantum efficiency of at least 70% at an irradiance energy from 1.38 eV to 1.03 eV, and an internal quantum efficiency of at least 80% at an irradiance energy from 1.38 eV to 1.15 eV;   wherein the internal quantum efficiency is measured at a junction temperature of 25° C.,   wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 a band gap within a range from 0.8 eV to 1.3 eV; and 
 values for x, y, and z of 0.03≦x≦0.19, 0.008≦y≦0.055, and 0.001≦z≦0.05, and 
 wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is lattice matched to a (Si,Sn)Ge substrate. 
   
     
     
         2 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by a Eg/q-Voc equal to or greater than 0.55 V measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C. 
     
     
         3 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by a Eg/q-Voc from 0.4 V to 0.7 V measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C. 
     
     
         4 - 7 . (canceled) 
     
     
         8 . A multijunction photovoltaic cell, comprising from three to five subcells, wherein,
 at least one of the subcells comprises the Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 ; and   each of the subcells is lattice matched to each of the other subcells.   
     
     
         9 - 13 . (canceled) 
     
     
         14 . A multijunction photovoltaic cell, comprising:
 a first subcell comprising (Al)InGaP;   a second subcell comprising (Al,In)GaAs underlying the first subcell;   a third subcell comprising Ga 1-x In x N y As 1-y-z Sb z  underlying the second subcell; and   a fourth subcell comprising (Si,Sn)Ge underlying the third subcell; wherein,
 each of the subcells is lattice matched to each of the other subcells; 
 the third subcell is characterized by a bandgap from 0.83 eV to 1.22 eV; and 
 the third subcell is characterized by an internal quantum efficiency greater than 70% at an irradiance energy throughout the range from 0.95 eV to 1.55 eV at a junction temperature of 25° C. 
   
     
     
         15 . The multijunction photovoltaic cell of  claim 14 , wherein the third subcell is characterized by an internal quantum efficiency greater than 80% at an irradiance energy throughout the range from 1.1 eV to 1.5 eV. 
     
     
         16 . The multijunction photovoltaic cell of  claim 14 , wherein the multijunction photovoltaic cell is characterized by,
 an open circuit voltage Voc equal to or greater than 2.5 V;   a short circuit current density Jsc equal to or greater than 8 mA/cm 2 ;   a fill factor equal to or greater than 75%; and   an efficiency greater than 25%,   measured using a 1 sun AM1.5D or AM0 spectrum at a junction temperature of 25° C.   
     
     
         17 . The multijunction photovoltaic cell of  claim 14 , wherein the multijunction photovoltaic cell is characterized by,
 an open circuit voltage Voc from 2.5 V to 3.5 V;   a short circuit current density Jsc from 13 mA/cm 2  to 17 mA/cm 2 ;   a fill factor from 80% to 90%; and   an efficiency from 28% to 36%,   measured using a 1 sun AM0 spectrum at a junction temperature of 25° C.   
     
     
         18 . The multijunction photovoltaic cell of  claim 14 , wherein,
 first subcell is characterized by a bandgap from 1.9 eV to 2.2 eV;   the second subcell is characterized by a bandgap from 1.40 eV to 1.57 eV;   the third subcell is characterized by a bandgap from 0.98 eV to 1.2 eV; and   the fourth subcell is characterized by a bandgap of 0.67 eV.   
     
     
         19 . The multijunction photovoltaic cell of  claim 14 , wherein values for x, y, and z are 0.075≦x≦0.083, 0.015≦y≦0.020, and 0.003≦z≦0.09. 
     
     
         20 . The multijunction photovoltaic cell of  claim 14 , wherein the third subcell is characterized by,
 an open circuit voltage Voc from 0.42 V to 0.57 V;   a short circuit current density Jsc from 10 mA/cm 2  to 13 mA/cm 2 ; and   a bandgap from 1.0 eV to 1.17 eV,   measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C.   
     
     
         21 . A multijunction photovoltaic cell, comprising:
 a first subcell comprising (Al)InGaP;   a second subcell comprising (Al,In)GaAs underlying the first subcell;   a third subcell comprising Ga 1-x In x N y As 1-y-z Sb z  underlying the second subcell; and   a fourth subcell comprising Ga 1-x In x N y As 1-y-z Sb z  underlying the third subcell; wherein,
 each of the subcells is lattice matched to each of the other subcells; 
 the third subcell is characterized by a bandgap from 0.97 eV to 1.3 eV; 
 the fourth subcell is characterized by a bandgap from 0.8 eV to 1 eV; and 
 each of the fourth subcell and the third subcell is characterized by an internal quantum efficiency greater than 70% at an irradiance energy throughout the range from 0.95 eV to 1.55 eV. 
   
     
     
         22 . The multijunction photovoltaic cell of  claim 21 , wherein each of the fourth subcell and the third subcell is characterized by an internal quantum efficiency greater than 80% at an illumination energy throughout the range from 1.1 eV to 1.5 eV. 
     
     
         23 . The multijunction photovoltaic cell of  claim 21 , wherein the multijunction photovoltaic cell is characterized by,
 an open circuit voltage Voc equal to or greater than 2.8 V;   a short circuit current density Jsc equal to or greater than 18 mA/cm 2 ;   a fill factor equal to or greater than 80%; and   an efficiency equal to or greater than 29%,   measured using a 1 sun 1.5 AM0 spectrum at a junction temperature of 25° C.   
     
     
         24 . The multijunction photovoltaic cell of  claim 21 , wherein,
 the first subcell is characterized by a bandgap from 1.90 eV to 2.20 eV; and   the second subcell is characterized by a bandgap from 1.4 eV to 1.7 eV.   
     
     
         25 . The multijunction photovoltaic cell of  claim 21 , comprising:
 the fourth subcell comprising Ga 1-x In x N y As 1-y-z Sb z  is characterized by a bandgap from 0.9 eV to 1 eV;   the third subcell comprising Ga 1-x In x N y As 1-y-z Sb z  is characterized by a bandgap from 1.1 eV to 1.3 eV;   the second subcell comprising (Al,In)GaAs is characterized by a bandgap from 1.5 eV to 1.7 eV; and   the first subcell comprising AlInGaP is characterized by a bandgap from 1.9 eV to 2.1 eV;   wherein the multijunction photovoltaic cell is characterized by,
 an open circuit voltage Voc equal to or greater than 3.5 V; 
 a short circuit current density Jsc equal to or greater than 8 mA/cm 2 ; 
 a fill factor equal to or greater than 75%; and 
 an efficiency equal to or greater than 27%, 
 measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C. 
   
     
     
         26 . The multijunction photovoltaic cell of  claim 21 , wherein the multijunction photovoltaic cell is characterized by,
 an open circuit voltage Voc equal to or greater than 2.5 V;   a short circuit current density Jsc equal to or greater than 8 mA/cm 2 ;   a fill factor equal to or greater than 75%; and   an efficiency equal to or greater than 25%,   measured using a 1 sun AM1.5D or AM0 spectrum at a junction temperature of 25° C.   
     
     
         27 . The multijunction photovoltaic cell of  claim 21 , wherein the multijunction photovoltaic cell is characterized by,
 an open circuit voltage Voc from 2.5 V to 3.5 V;   a short circuit current density Jsc from 13 mA/cm 2  to 17 mA/cm 2 ; and   a fill factor from 80% to 90%; and   an efficiency from 28% to 36%,   measured using a 1 sun AM0 spectrum at a junction temperature of 25° C.   
     
     
         28 . The multijunction photovoltaic cell of  claim 21 , wherein the multijunction photovoltaic cell is characterized by,
 an open circuit voltage Voc from 3 V to 3.5 V;   a short circuit current density Jsc from 8 mA/cm 2  to 14 mA/cm 2 ;   a fill factor from 80% to 90%; and   an efficiency from 28% to 36%,   measured using a 1 sun AM1.5D spectrum at a junction temperature of 25° C.   
     
     
         29 . A photovoltaic module comprising at least one multijunction photovoltaic cell of  claim 14 . 
     
     
         30 . A photovoltaic system comprising at least one multijunction photovoltaic cell of  claim 14 . 
     
     
         31 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.16≦x≦0.19, 0.040≦y≦0.051, and 0.010≦z≦0.018; and   a band gap from 0.89 eV to 0.92 eV.   
     
     
         32 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.10≦x≦0.16, 0.028≦y≦0.037, and 0.005≦z≦0.016; and   a band gap from 0.95 eV to 0.98 eV.   
     
     
         33 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.075≦x≦0.081, 0.040≦y≦0.051, and 0.010≦z≦0.018; and   a band gap from 1.111 eV to 1.117 eV.   
     
     
         34 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.016≦x≦0.024, 0.077≦y≦0.085, and 0.011≦z≦0.015; and   a band gap from 1.10 eV to 1.14 eV.   
     
     
         35 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.068≦x≦0.078, 0.010≦y≦0.017, and 0.004≦z≦0.008; and   a band gap from 1.15 eV to 1.16 eV.   
     
     
         36 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.011≦x≦0.015, 0.04≦y≦0.06, and 0.016≦z≦0.020; and   a band gap from 1.14 eV to 1.18 eV.   
     
     
         37 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.012≦x≦0.016, 0.033≦y≦0.037, and 0.016≦z≦0.020; and   a band gap from 1.18 eV to 1.22 eV.   
     
     
         38 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.026≦x≦0.030, 0.024≦y≦0.018, and 0.005≦z≦0.009; and   a band gap from 1.18 eV to 1.22 eV.   
     
     
         39 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.075≦x≦0.082, 0.016≦y≦0.019, and 0.004≦z≦0.010; and   a band gap from 1.12 eV to 1.16 eV.   
     
     
         40 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.011≦x≦0.016, 0.02≦y≦0.065, and 0.016≦z≦0.020; and   a band gap from 1.14 eV to 1.22 eV.   
     
     
         41 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.016≦x≦0.024, 0.077≦y≦0.085, and 0.010≦z≦0.016, and   a band gap from 1.118 eV to 1.122 eV.   
     
     
         42 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.06≦x≦0.09, 0.01≦y≦0.025, and 0.004≦z≦0.014; and   a bandgap from 1.12 eV to 1.16 eV.   
     
     
         43 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.004≦x≦0.08, 0.008≦y≦0.02, and 0.004≦z≦0.014; and   a bandgap from 1.14 eV to 1.22 eV.   
     
     
         44 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by,
 values of 0.06≦x≦0.09, 0.01≦y≦0.03, and 0.004≦z≦0.014; and   a bandgap from 1.118 eV to 1.122 eV.   
     
     
         45 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by a compressive strain less than 0.6%. 
     
     
         46 . The Ga 1-x In x N y As 1-y-z Sb z  subcell of  claim 1 , wherein the Ga 1-x In x N y As 1-y-z Sb z  subcell is characterized by a compressive strain from 0.1% to 0.6%