Hybridized cmp conditioner
Abstract
A hybridized CMP conditioner includes a base, a first abrasive unit and a plurality of second abrasive units. The first abrasive unit includes a first bonding layer, a substrate for abrasive unit provided on the first bonding layer and an abrasive layer provided on the substrate for abrasive unit. The abrasive layer is a diamond coating. The diamond coating is provided on the surface thereof with a plurality of abrasive tips. Each second abrasive unit includes a second bonding layer, a carrying post provided on the second bonding layer, an abrasive particle provided on the carrying post and an abrasive material-bonding layer provided between the carrying post and the abrasive particle. The CMP conditioner is provided with both excellent cutting force and flattening capability through the first abrasive unit provided with the abrasive layer and the second abrasive units provided with the abrasive particles.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A hybridized CMP conditioner, comprising:
a base; a first abrasive unit, provided on said base and comprising a first bonding layer fixed on said base, a substrate for abrasive unit provided on said first bonding layer and an abrasive layer provided on said substrate for abrasive unit, said abrasive layer being a diamond coating formed through a chemical vapor deposition process, and said diamond coating being provided on the surface thereof with a plurality of abrasive tips; and a plurality of second abrasive units, provided on said base and comprising a second bonding layer fixed on said base, a carrying post provided on said second bonding layer, an abrasive particle provided on said carrying post and an abrasive material-bonding layer provided between said carrying post and said abrasive particle.
2 . The hybridized CMP conditioner according to claim 1 , wherein said base is provided on the surface thereof with a central region and an annular outer region around the outside of said central region.
3 . The hybridized CMP conditioner according to claim 2 , wherein said central region is provided with a recessed portion for said first abrasive unit to be provided therein, and said annular outer region is provided with a plurality of first accommodating portions spaced apart from each other for said second abrasive units to be provided therein.
4 . The hybridized CMP conditioner according to claim 3 , wherein each of said first accommodating portions is presented as a through-hole structure or a concave hole structure.
5 . The hybridized CMP conditioner according to claim 2 , wherein said central region is provided with a plurality of second accommodating portions spaced apart from each other for accommodating said second abrasive units, and said annular outer region is provided with a recessed portion for said first abrasive unit to be provided therein.
6 . The hybridized CMP conditioner according to claim 5 , wherein each of said second accommodating portions is presented as a through-hole structure or a concave hole structure.
7 . The hybridized CMP conditioner according to claim 2 , wherein said central region and said annular outer region are provided with a recessed portion for said first abrasive unit to be provided therein, and said base further comprises a plurality of third accommodating portions provided in said first abrasive unit for accommodating said second abrasive units.
8 . The hybridized CMP conditioner according to claim 7 , wherein each of said third accommodating portions is presented as a through-hole structure or a concave hole structure.
9 . The hybridized CMP conditioner according to claim 2 , wherein said base further comprises an annular inner region on the surface thereof, said annular inner region surrounding the inner side of said central region, and said annular inner region being provided with a plurality of fourth accommodating portions spaced apart from each other for accommodating said second abrasive units.
10 . The hybridized CMP conditioner according to claim 9 , wherein each of said fourth accommodating portions is presented as a through-hole structure or a concave hole structure.
11 . The hybridized CMP conditioner according to claim 2 , wherein said central region is provided with a recessed portion for said first abrasive unit to be provided therein.
12 . The hybridized CMP conditioner according to claim 1 , wherein said base is a plane substrate.
13 . The hybridized CMP conditioner according to claim 1 , wherein said second abrasive units are presented as a patterned arrangement, said patterned arrangement being selected from the group consisting of an equally spaced arrangement, unequally spaced arrangement, single annulus arrangement and multi-annuli arrangement.
14 . The hybridized CMP conditioner according to claim 1 , wherein the number of said second abrasive units is in the range of 2 to 300.
15 . The hybridized CMP conditioner according to claim 1 , wherein said abrasive particle is selected from the group consisting of synthetic diamond, natural diamond, polycrystalline diamond and cubic boron nitride.
16 . The hybridized CMP conditioner according to claim 1 , wherein said first bonding layer, said second bonding layer and said abrasive material-bonding layer are made of material selected from the group consisting of ceramic material, brazing material, electroplating material, metal material and polymer material.
17 . The hybridized CMP conditioner according to claim 16 , wherein said brazing material is selected from the group consisting of Fe, Co, Ni, Cr, Mn, Si, B, C and Al.
18 . The hybridized CMP conditioner according to claim 16 , wherein said polymer material is selected from the group consisting of epoxy resin, polyester resin, polyacrylate resin and phenolic resin.
19 . The hybridized CMP conditioner according to claim 1 , wherein said base and said carrying post are made of material selected from the group consisting of stainless steel, metal material, plastic material and ceramic material.
20 . The hybridized CMP conditioner according to claim 1 , wherein the material of said substrate for abrasive unit is selected from the group consisting of silicon carbide, silicon, polycrystalline alumina, monocrystalline alumina and diamond.
21 . The hybridized CMP conditioner according to claim 1 , wherein a particle diameter of said abrasive particle is in a range of 500 μm to 1200 μm.Cited by (0)
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