Magnetic memory element and storage device using the same

Abstract

A magnetic miniaturized memory element with improved thermal stability of magnetization includes a first magnetic layer, an insulating layer that is formed on the first magnetic layer, a second magnetic layer that is formed on the insulating layer, and an expanded interlayer insulating film that comes into contact with side surfaces of the first and second magnetic layers, where at least one of the first magnetic layer and the second magnetic layer is strained and deformed so as to be elongated in an easy magnetization axis direction of the first magnetic layer or the second magnetic layer or compressive strain remains in any direction in the plane of at least one of the first magnetic layer and the second magnetic layer.

1 . A magnetic memory element comprising:
 a first electrode;   a second electrode; and   a magnetic tunnel junction portion between the first electrode and the second electrode, wherein the magnetic tunnel junction portion includes a first magnetic layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer;   wherein the second electrode is configured to draw at least one of the first and second magnetic layers and contract at least one of the first and second magnetic layers in an in-plane direction.   
     
     
         2 . The magnetic memory element of  claim 1 , wherein the second electrode is configured to, in response to thermal contraction, draw the at least one of the first and second magnetic layers and to contract the at least one of the first and second magnetic layers in an in-plane direction. 
     
     
         3 . The magnetic memory element of  claim 1 , wherein the second electrode has a thermal expansion coefficient that is different than a thermal expansion coefficient of the magnetic tunnel junction. 
     
     
         4 . The magnetic memory element of  claim 1 , wherein the second electrode has a thermal expansion coefficient that is greater than a thermal expansion coefficient of the magnetic tunnel junction. 
     
     
         5 . The magnetic memory element of  claim 4 , wherein the second electrode has a thermal expansion coefficient of 23 ppm/K to 28 ppm/K. 
     
     
         6 . The magnetic memory element of  claim 4 , wherein the second electrode has a thermal expansion coefficient of 14 ppm/K to 28 ppm/K. 
     
     
         7 . A storage device comprising:
 a die frame;   a chip mounted on the die frame; and   a magnetic memory element integrated into the chip;   wherein the die frame and the chip are in a warped state that applies a compressive stress to a magnetic layer of the magnetic memory element.   
     
     
         8 . The storage device of  claim 7 , further comprising a package that retains the die frame and the chip in the warped state. 
     
     
         9 . The storage device of  claim 8 , wherein the package comprises a cured sealing material. 
     
     
         10 . The storage device of  claim 7 , further comprising one or more holding frames surrounding the die frame and chip, wherein the one or more holding frames are configured to maintain the warped state. 
     
     
         11 . The storage device of  claim 7 , wherein the warped state applies the compressive stress in an in-plane direction of the magnetic layer. 
     
     
         12 . The storage device of  claim 7 , wherein the warped state elongates the magnetic layer in a direction perpendicular to a surface of the magnetic layer. 
     
     
         13 . A storage device comprising:
 a die frame;   a chip mounted on the die frame; and   a plurality of magnetic memory elements integrated into the chip;   wherein the die frame and the chip are in a warped state that applies a compressive stress to a magnetic layer of each magnetic memory element from the plurality of magnetic memory elements.   
     
     
         14 . The storage device of  claim 13 , further comprising a package that retains the die frame and the chip in the warped state. 
     
     
         15 . The storage device of  claim 14 , wherein the package comprises a cured sealing material. 
     
     
         16 . The storage device of  claim 13 , further comprising one or more holding frames surrounding the die frame and the chip, wherein the one or more holding frames are configured to maintain the warped state. 
     
     
         17 . The storage device of  claim 13 , wherein the warped state applies the compressive stress in an in-plane direction for the magnetic layer of each magnetic memory element. 
     
     
         18 . The storage device of  claim 13 , wherein the warped state elongates the magnetic layer in a direction perpendicular to a surface of the magnetic layer of each magnetic memory element.