Diamond semiconductor system and method

Abstract

Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer.

1 .  1 - 8 . (canceled) 
     
     
         9 . A method of fabricating contacts on diamond semiconductors, the method including the steps of:
 selecting a diamond semiconductor material having a surface, the diamond semiconductor material having n-type donor atoms and a diamond lattice, wherein between 0.16% and 0.30% of the n-type donor atoms contribute conduction electrons with mobility greater than 770 cm 2 /Vs to the diamond lattice at 100 kPa and 300K;   forming a carbide interface contact layer on the surface; and   forming a metal layer on the interface contact layer.   
     
     
         10 . The method of fabricating contacts on diamond semiconductors of  claim 9 , wherein the metal layer is a degeneratively doped semiconductor layer. 
     
     
         11 . The method of fabricating contacts on diamond semiconductors of  claim 9 , wherein the metal layer is deposed via sputtering. 
     
     
         12 . The method of fabricating contacts on diamond semiconductors of  claim 9 , wherein the metal layer is deposed via vapor deposition. 
     
     
         13 . The method of fabricating contacts on diamond semiconductors of  claim 9 , wherein the metal layer is a transparent metal. 
     
     
         14 . The method of fabricating contacts on diamond semiconductors of  claim 9 , further including the step of deposing the diamond material on a metal substrate. 
     
     
         15 . The method of fabricating contacts on diamond semiconductors of  claim 9 , further including the step of annealing the diamond material. 
     
     
         16 . A diamond semiconductor formed according to the method of  claim 9 . 
     
     
         17 . A method of fabricating contacts on diamond semiconductors, the method including the steps of:
 selecting a diamond semiconductor material having a surface, the diamond semiconductor material having n-type donor atoms and a diamond lattice, wherein the n-type donor atoms contribute conduction electrons with mobility greater than 770 cm 2 /Vs to the diamond lattice at 100 kPa and 300K;   forming a carbide interface contact layer on the surface; and   forming a metal layer on the interface contact layer.