Solid pcd cutter

Abstract

A method of forming a cutting element may include placing a plurality of diamond particles adjacent to a substrate in a reaction cell and subjecting the plurality of diamond particles to high pressure high temperature conditions to form a polycrystalline diamond body. The polycrystalline diamond body may include a cutting face area to thickness ratio ranging from 60:16 to 500:5. The polycrystalline diamond body may have at least one dimension greater than 8 mm.

What is claimed is: 
     
         1 . A method of forming a cutting element comprising:
 placing a plurality of diamond particles adjacent to a substrate in a reaction cell; and   subjecting the plurality of diamond particles to high pressure high temperature conditions to form a polycrystalline diamond body;   wherein the polycrystalline diamond body comprises a cutting face area to thickness ratio ranging from 60:16 to 500:5; and   wherein the polycrystalline diamond body has at least one dimension greater than 8 mm.   
     
     
         2 . The method of  claim 1 , further comprising leaching at least part of the polycrystalline diamond body. 
     
     
         3 . The method of  claim 2 , wherein the entire polycrystalline diamond body is leached to form a thermally stable polycrystalline diamond body. 
     
     
         4 . The method of  claim 1 , further comprising removing the substrate. 
     
     
         5 . The method of  claim 1 , wherein the substrate comprises a first region adjacent to the diamond body and at least one additional region adjacent to the first region opposite from the diamond body, wherein the first region comprises hard particles having a smaller median grain size than hard particles of the at least one additional region. 
     
     
         6 . The method of  claim 1 , further comprising placing a layer of carbide powder between the substrate and the plurality of diamond particles. 
     
     
         7 . The method of  claim 1 , wherein the step of placing further comprises mixing boron powder with the plurality of diamond particles. 
     
     
         8 . The method of  claim 1 , wherein the polycrystalline diamond body has a bulk thermal conductivity of greater than 200 W/mK. 
     
     
         9 . The method of  claim 1 , wherein a carbonate solvent catalyst is provided with the plurality of diamond particles in the reaction cell. 
     
     
         10 . A method of forming a cutting element comprising:
 placing a plurality of first diamond particles and a catalyst material source in a reaction cell; and   subjecting the plurality of diamond particles to high pressure high temperature conditions to form a first polycrystalline diamond body; and   performing a second sintering process comprising:   assembling a second volume comprising diamond particles adjacent to the first polycrystalline diamond body; and   subjecting the second volume and the first polycrystalline diamond body to high pressure high temperature conditions to form a second polycrystalline diamond body.   
     
     
         11 . The method of  claim 10 , wherein the second polycrystalline diamond body has at least one dimension greater than 8 mm. 
     
     
         12 . The method of  claim 10 , further comprising a third sintering process comprising:
 assembling a third volume comprising diamond particles adjacent to the second polycrystalline diamond body; and   subjecting the third volume and the second polycrystalline diamond body to high pressure high temperature conditions to form a third polycrystalline diamond body.   
     
     
         13 . The method of  claim 12 , further comprising a fourth sintering process comprising:
 assembling a fourth volume comprising diamond particles adjacent to the third polycrystalline diamond body; and   subjecting the fourth volume and the third polycrystalline diamond body to high pressure high temperature conditions to form a fourth polycrystalline diamond body.   
     
     
         14 . The method of  claim 10 , wherein the catalyst material source is a substrate. 
     
     
         15 . The method of  claim 14 , wherein after the step of subjecting and prior to the step of performing a second sintering process, the substrate is removed. 
     
     
         16 . The method of  claim 10 , wherein after the step of subjecting and prior to the step of performing a second sintering process, the first polycrystalline diamond body is treated. 
     
     
         17 . The method of  claim 10 , wherein the catalyst material source is a powder provided with the plurality of first diamond particles. 
     
     
         18 . The method of  claim 10 , wherein the catalyst material source comprises a carbonate solvent catalyst. 
     
     
         19 . The method of  claim 10 , wherein the second volume comprises diamond particles larger than the first diamond particles. 
     
     
         20 . The method of  claim 10 , wherein the second volume comprises diamond particles smaller than the first diamond particles. 
     
     
         21 . The method of  claim 10 , wherein the catalyst material source forms a core of the second polycrystalline diamond body. 
     
     
         22 . A method of forming a cutting element comprising:
 placing a plurality of diamond particles adjacent to a substrate in a reaction cell; and   subjecting the plurality of diamond particles to high pressure high temperature conditions of 1300° C.-1700° C. and 55 to 90 kbar to form a polycrystalline diamond body;   wherein the substrate comprises a first region adjacent to the diamond particles and at least one additional region adjacent to the first region opposite from the diamond particles, wherein the first region comprises hard particles having a smaller median grain size than hard particles of the at least one additional region.   
     
     
         23 . The method of  claim 22 , further comprising leaching at least part of the polycrystalline diamond body. 
     
     
         24 . The method of  claim 23 , wherein the entire polycrystalline diamond body is leached to form a thermally stable polycrystalline diamond body. 
     
     
         25 . The method of  claim 22 , further comprising removing the substrate. 
     
     
         26 . The method of  claim 22 , further comprising placing a layer of carbide powder between the substrate and the plurality of diamond particles. 
     
     
         27 . The method of  claim 22 , wherein the step of placing further comprises mixing boron powder with the plurality of diamond particles. 
     
     
         28 . The method of  claim 22 , wherein a carbonate solvent catalyst is provided with the plurality of diamond particles in the reaction cell.