Pixel structure and display device

Abstract

The present application discloses a pixel structure and a display device. The pixel structure includes: a scan line having a branch structure; and a semiconductor pattern intersecting with the scan line and the branch structure. The semiconductor pattern includes: a first channel region disposed below the scan line; a second channel region disposed below the branch structure; and doping regions respectively disposed at two sides of the first channel region and at two sides of the second channel region. Wherein, the width of the second channel region is less than the width of the first channel region. The pixel structure may improve the display performance of the display screen.

What is claimed is: 
     
         1 . A pixel structure, comprising:
 a scan line having a branch structure; and   a semiconductor pattern intersecting with the scan line and the branch structure, wherein the semiconductor pattern comprises:
 a first channel region corresponding to the scan line; 
 a second channel region corresponding to the branch structure; and 
 doping regions respectively disposed at two sides of the first channel region and at two sides of the second channel region, 
   wherein a width of the second channel region is less than a width of the first channel region.   
     
     
         2 . The pixel structure according to  claim 1 , wherein the branch structure is an L-shaped branch. 
     
     
         3 . The pixel structure according to  claim 2 , wherein the L-shaped branch comprises a first portion and a second portion, the first portion extends perpendicularly from the scan line, and the second portion intersects perpendicularly with the semiconductor pattern. 
     
     
         4 . The pixel structure according to  claim 2 , wherein the semiconductor pattern comprises a linear portion, the second portion of the L-shaped branch intersects with the first portion of the L-shaped branch, and the second portion of the L-shaped branch intersects perpendicularly with the linear portion of the semiconductor pattern. 
     
     
         5 . The pixel structure according to  claim 1 , wherein the branch structure extends perpendicularly from the scan line. 
     
     
         6 . The pixel structure according to  claim 5 , wherein the semiconductor pattern comprises at least a first portion and a second portion, the first portion intersects perpendicularly with the scan line, and the second portion intersects perpendicularly with the branch structure. 
     
     
         7 . The pixel structure according to  claim 1 , wherein the width of the second channel region is one fifth to four fifth of the width of the first channel region. 
     
     
         8 . The pixel structure according to  claim 1 , wherein the semiconductor pattern comprises a polysilicon pattern. 
     
     
         9 . The pixel structure according to  claim 1 , wherein the width of the pixel structure is less than 15 um. 
     
     
         10 . The pixel structure according to  claim 1 , wherein the pixel structure has a pixel storage capacitance less than 150 fF. 
     
     
         11 . A display device, comprising a pixel structure according to  claim 1 . 
     
     
         12 . The display device according to  claim 11 , wherein the branch structure is an L-shaped branch. 
     
     
         13 . The display device according to  claim 12 , wherein the L-shaped branch comprises a first portion and a second portion, the first portion extends perpendicularly from the scan line, and the second portion extends perpendicularly from the semiconductor pattern. 
     
     
         14 . The display device according to  claim 12 , wherein the semiconductor pattern comprises a linear portion, the second portion of the L-shaped branch intersects with the first portion of the L-shaped branch, and the second portion of the L-shaped branch intersects perpendicularly with the linear portion of the semiconductor pattern. 
     
     
         15 . The display device according to  claim 11 , wherein the branch structure extends perpendicularly from the scan line. 
     
     
         16 . The display device according to  claim 15 , wherein the semiconductor pattern comprises at least a first portion and a second portion, the first portion intersects perpendicularly with the scan line, and the second portion intersects perpendicularly with the branch structure. 
     
     
         17 . The display device according to  claim 11 , wherein the width of the second channel region is ⅕ to ⅘ of the width of the first channel region. 
     
     
         18 . The display device according to  claim 11 , wherein the semiconductor pattern comprises a polysilicon pattern. 
     
     
         19 . The display device according to  claim 11 , wherein the width of the pixel structure is less than 15 um. 
     
     
         20 . The display device according to  claim 11 , wherein the pixel structure has a pixel storage capacitance less than 150 fF.