Image sensor and electronic device including the same

Abstract

An image sensor includes a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region, a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region, and a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths.

1 . An image sensor, comprising:
 a semiconductor substrate integrated with at least one first photo-sensing device sensing light in a first wavelength region and at least one second photo-sensing device sensing light in a second wavelength region shorter than the first wavelength region;   a photoelectric device including a pair of electrodes facing each other and a light absorption layer between the electrodes, the photoelectric device selectively absorbing light in a third wavelength region between the first wavelength region and the second wavelength region; and   a nanostructural body between the semiconductor substrate and the photoelectric device, the nanostructural body including at least two parts having different optical paths,   wherein the at least one first photo-sensing device and the at least one second photo-sensing device are arranged along one direction, respectively, and   wherein the nanostructural body is disposed through the at least one photo-sensing device and the at least one second photo-sensing device along the one direction.   
     
     
         2 . The image sensor of  claim 1 , wherein the first wavelength region is a red wavelength region, the second wavelength region is a blue wavelength region, and the third wavelength region is a green wavelength region. 
     
     
         3 . The image sensor of  claim 1 , wherein the nanostructural body has an asymmetric structure. 
     
     
         4 . The image sensor of  claim 1 , wherein the nanostructural body includes a first part having a first length along a vertical direction and a second part having a second length shorter than the first length. 
     
     
         5 . The image sensor of claim  44 , wherein
 the first part is adjacent to the at least one first photo-sensing device, and   the second part is adjacent to the at least one second photo-sensing device.   
     
     
         6 . The image sensor of  claim 4 , wherein the first part and the second part are in contact with each other or separate from each other. 
     
     
         7 . The image sensor of  claim 4 , wherein
 the nanostructural body has a width of less than or equal to about 1 μm, and   the first length of the nanostructural body is less than or equal to about 2 μm.   
     
     
         8 . The image sensor of  claim 1 , wherein
 the nanostructural body includes one of an oxide, a nitride, a sulfide, and a combination thereof.   
     
     
         9 . The image sensor of  claim 1 , wherein the nanostructural body includes a material having a refractive index of about 1.6 to about 2.6. 
     
     
         10 . The image sensor of  claim 1 , further comprising:
 an insulation layer surrounding the nanostructural body between the semiconductor substrate and the photoelectric device,   wherein the nanostructural body includes a material having a higher refractive index than the insulation layer.   
     
     
         11 . The image sensor of  claim 10 , wherein
 the insulation layer includes a silicon oxide, and   the nanostructural body includes one of a silicon nitride, a titanium oxide, zinc sulfide, and a combination thereof.   
     
     
         12 . The image sensor of  claim 1 , wherein
 the pair of electrodes facing each other are light-transmitting electrodes, and   the light absorption layer includes a p-type semiconductor material selectively absorbing light in the third wavelength region and an n-type semiconductor material selectively absorbing light in the third wavelength region.   
     
     
         13 . The image sensor of  claim 12 , wherein the third wavelength region is a green wavelength region. 
     
     
         14 . The image sensor of  claim 1 , further comprising:
 a focusing lens configured to collect light into the nanostructural body by controlling the incidence direction of the light and disposed on the photoelectric device.   
     
     
         15 . The image sensor of  claim 14 , wherein the focusing lens is a cylindrical focusing lens. 
     
     
         16 .- 19 . (canceled) 
     
     
         20 . An electronic device comprising the image sensor according to  claim 1 .