Semiconductor device and manufacturing method thereof

Abstract

A manufacturing method of a semiconductor device comprises the steps of: providing a transparent substrate; forming a gate electrode on the transparent substrate; forming a gate insulation layer covering the gate electrode; forming an oxide semiconductor layer on the gate insulation layer and at least partially over the gate electrode; forming an etching stop layer over the gate electrode and at least covering a part of the oxide semiconductor layer, wherein the etching stop layer includes an opening; forming an electrode layer at the opening and on a part of the etching stop layer; and applying a low-resistance treatment to a part of the oxide semiconductor layer uncovered by the etching stop layer and the electrode layer to form a pixel electrode.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a transparent substrate;   a gate electrode disposed on the transparent substrate;   a gate insulation layer covering the gate electrode;   an oxide semiconductor layer disposed on the gate insulation layer and at least partially over the gate electrode;   an etching stop layer disposed over the gate electrode and at least covering a part of the oxide semiconductor layer; and   an electrode layer disposed on a part of the oxide semiconductor layer;   wherein a part of the oxide semiconductor layer uncovered by the etching stop layer and the electrode layer is a pixel electrode.   
     
     
         2 . The semiconductor device as recited in  claim 1 , wherein the electrode layer and the oxide semiconductor layer are electrically connected with each other.