Chemical mechanical polishing conditioner and fabrication method thereof

Abstract

A chemical mechanical polishing conditioner comprises a substrate and at least one abrasive unit. The abrasive unit is provided on the substrate, and the abrasive unit comprises a supporting layer, an abrasive layer and a stress-relief layer. The supporting layer is provided with a working face far away from the substrate and a non-working face opposite to the working face. The abrasive layer is provided on the working face of the supporting layer, and the abrasive layer is a first diamond-plated film formed by chemical vapor deposition method. The first diamond-plated film is provided with a plurality of abrasive tips. The stress-relief layer is provided on the non-working face of the supporting layer, and the stress-relief layer is a second diamond-plated film formed by chemical vapor deposition method. A thermal stress-relieving effect may be exerted by the stress-relief layer, so as to reduce warpage or deformation of the supporting layer.

What is claimed is: 
     
         1 . A chemical mechanical polishing conditioner, comprising:
 a substrate; and   at least one abrasive unit provided on said substrate, said abrasive unit comprising:   a supporting layer provided with a working face far away from said substrate and a non-working face opposite to said working face;   an abrasive layer provided on said working face of said supporting layer, said abrasive layer being a first diamond-plated film formed by chemical vapor deposition method, said first diamond-plated film being provided with a plurality of abrasive tips; and   a stress-relief layer provided on said non-working face of said supporting layer, said stress-relief layer being a second diamond-plated film formed by chemical vapor deposition method.   
     
     
         2 . The chemical mechanical polishing conditioner according to  claim 1 , wherein said substrate is provided with at least one recessed portion for accommodating said abrasive unit 
     
     
         3 . The chemical mechanical polishing conditioner according to  claim 1 , wherein said substrate is provided with at least one through-hole for accommodating said abrasive unit. 
     
     
         4 . The chemical mechanical polishing conditioner according to  claim 1 , wherein said substrate is a plane substrate. 
     
     
         5 . The chemical mechanical polishing conditioner according to  claim 1 , wherein said substrate is selected from the group consisting of a stainless steel substrate, a die steel substrate, a metal alloy substrate, a ceramic substrate and a polymer substrate. 
     
     
         6 . The chemical mechanical polishing conditioner according to  claim 1 , wherein the material of said supporting layer is silicon or silicon carbide. 
     
     
         7 . The chemical mechanical polishing conditioner according to  claim 1 , wherein a plurality of projecting tips are formed on said working face of said supporting layer through a machining process, while said abrasive layer is allowed for cladding said working face of said supporting layer and thus provided with said abrasive tips corresponding to said projecting tips. 
     
     
         8 . The chemical mechanical polishing conditioner according to  claim 1 , wherein said first diamond-plated film is subjected to a machining process to form said abrasive tips. 
     
     
         9 . The chemical mechanical polishing conditioner according to  claim 8 , wherein said machining process is selected from the group consisting of a grinding, a laser machining, an electro-discharge machining, a dry etching and a wet etching. 
     
     
         10 . The chemical mechanical polishing conditioner according to  claim 1 , further comprising a bonding layer provided between said substrate and said abrasive unit. 
     
     
         11 . The chemical mechanical polishing conditioner according to  claim 10 , wherein the material of said bonding layer is selected from the group consisting of a ceramic material, a brazing material, an electroplating material, an metal material and a polymer material. 
     
     
         12 . The chemical mechanical polishing conditioner according to  claim 11 , wherein said brazing material is selected from the group consisting of Fe, Co, Ni, Cr, Mn, Si and Al. 
     
     
         13 . The chemical mechanical polishing conditioner according to  claim 11 , wherein said polymer material is selected from the group consisting of epoxy resin, polyester resin, polyacrylate resin and phenolic resin. 
     
     
         14 . A fabrication method of chemical mechanical polishing conditioner, comprising the steps of
 step S 1 : providing a supporting layer having a working face and a non-working face opposite to said working face;   step S 2 : providing an abrasive layer and a stress-relief layer on said working face and said non-working face of said supporting layer, respectively, to form an abrasive unit by chemical vapor deposition method, said abrasive layer and said stress-relief layer being a first diamond-plated film and a second diamond-plated film, respectively, said first diamond-plated film being provided with a plurality of abrasive tips; and   step S 3 : bonding said abrasive unit to a substrate.   
     
     
         15 . The fabrication method of chemical mechanical polishing conditioner according to  claim 14 , wherein in step S 2 , said abrasive layer is firstly formed on said working face of said supporting layer, and said stress-relief layer is then formed on said non-working face of said supporting layer. 
     
     
         16 . The fabrication method of chemical mechanical polishing conditioner according to  claim 14 , wherein in step S 2 , a plurality of projecting tips are firstly formed on said working face of said supporting layer through a machining process, and said abrasive layer is then formed on said working face, such that said first diamond-plated film is provided with said abrasive tips corresponding to said projecting tips. 
     
     
         17 . The fabrication method of chemical mechanical polishing conditioner according to  claim 14 , wherein in step S 2 , said abrasive layer is provided on said working face of said supporting layer, and said abrasive tips are formed on said first diamond-plated film through a machining process. 
     
     
         18 . The fabrication method of chemical mechanical polishing conditioner according to  claim 17 , wherein said machining process is selected from the group consisting of a grinding, a laser machining, an electro-discharge machining, a dry etching and a wet etching. 
     
     
         19 . The fabrication method of chemical mechanical polishing conditioner according to  claim 14 , wherein said substrate is provided with at least one recessed portion for accommodating said abrasive unit 
     
     
         20 . The fabrication method of chemical mechanical polishing conditioner according to  claim 14 , wherein said substrate is provided with at least one through-hole for accommodating said abrasive unit. 
     
     
         21 . The fabrication method of chemical mechanical polishing conditioner according to  claim 14 , wherein said substrate is a plane substrate. 
     
     
         22 . The fabrication method of chemical mechanical polishing conditioner according to  claim 14 , wherein said substrate is selected from the group consisting of a stainless steel substrate, a die steel substrate, a metal alloy substrate, a ceramic substrate and a polymer substrate. 
     
     
         23 . The fabrication method of chemical mechanical polishing conditioner according to  claim 14 , wherein the material of said supporting layer is silicon or silicon carbide.