Apparatus for fabricating two-dimensional layered chalcogenide film

Abstract

A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.

What is claimed is: 
     
         1 . An apparatus for fabricating two-dimensional layered chalcogenide film comprising:
 a reaction chamber;   a gas supply unit in fluid communication with the reaction chamber to at least supply a catalyst gas into the reaction chamber;   an vacuum unit in fluid communication with the reaction chamber to introduce a vacuum into the reaction chamber; and   an setup of external stimuli to generate energetic particles from the catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas introduced into the reaction chamber, wherein the energetic particles facilitate chalcogen-substitution reactions of the metal-based precursor gas and form a two-dimensional layered chalcogenide film.   
     
     
         2 . The apparatus as recited in  claim 1 , wherein the gas supply unit is further used to introduce a carrier gas into the reaction chamber. 
     
     
         3 . The apparatus as recited in  claim 1 , wherein the catalyst gas is hydrogen gas. 
     
     
         4 . The apparatus as recited in  claim 1 , wherein the reaction chamber is a tube furnace divided into a front zone, a middle zone, and a rear end zone for placing a chalcogen-based precursor, a metal-based precursor, and a substrate, respectively, and the gas supply unit is set at one open end of the tube furnace near the front zone, and the vacuum unit is set at another one open end of the tube furnace near the rear end zone. 
     
     
         5 . The apparatus as recited in  claim 4 , further comprising a holder disposed in the rear end zone for holding the substrate so that a predetermined deposition surface of the substrate is inclined and faces to the front zone. 
     
     
         6 . The apparatus as recited in  claim 1 , further comprising: a first heater, a second heater, and a third heater to, respectively, heat the front zone, the middle zone, and the rear end zone. 
     
     
         7 . The apparatus as recited in  claim 1 , wherein the setup of external stimuli is used to provide plasma, ultraviolet light, or the combination thereof. 
     
     
         8 . The apparatus as recited in  claim 1 , wherein the reaction chamber is a cold-wall chamber, and the apparatus further comprises:
 a first sub-chamber in fluid communication with the reaction chamber for placing a chalcogen-based precursor;   a second sub-chamber in fluid communication with the reaction chamber for placing a metal-based precursor; and   a substrate holder arranged in the cold-wall chamber.   
     
     
         9 . The apparatus as recited in  claim 8 , further comprising:
 a first heater arranged in the first sub-chamber for heating the chalcogen-based precursor;   a second heater arranged in the second sub-chamber for heating the metal-based precursor; and   a third heater arranged in the cold-wall chamber for heating the substrate.   
     
     
         10 . An apparatus for fabricating two-dimensional layered chalcogenide film comprising:
 a reaction chamber;   a gas supply unit in fluid communication with the reaction chamber to at least supply a catalyst gas into the reaction chamber;   an vacuum unit in fluid communication with the reaction chamber to introduce a vacuum into the reaction chamber; and   an setup of external stimuli to generate energetic particles from the catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas introduced into the reaction chamber, wherein the energetic particles facilitate chalcogen-substitution reactions of the metal-based precursor gas and form a two-dimensional layered chalcogenide film   wherein the setup of external stimuli is an ultraviolet light source for intermittently providing ultraviolet light within a predetermined reaction time.   
     
     
         11 . The apparatus as recited in  claim 10 , wherein the ultraviolet light source is arranged outside the reaction chamber, and ultraviolet light emitted by the ultraviolet light source is transmitted into the reaction chamber.