US2017220079A1PendingUtilityA1
Method for making housing
Assignee: SHENZHEN FUTAIHONG PREC IND COPriority: Oct 23, 2014Filed: Apr 20, 2017Published: Aug 3, 2017
Est. expiryOct 23, 2034(~8.2 yrs left)· nominal 20-yr term from priority
G06F 1/1626H01Q 1/243H01Q 9/0485H01Q 1/40H01Q 1/42H05K 2201/09909G06F 1/1698H01Q 1/2266H01Q 13/10G06F 1/1613
51
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Claims
Abstract
A method of making a housing includes: providing a metal base, the metal base having an internal surface. Placing the metal base into a mold, liquid non-conductive material covering at least a portion of the internal surface of the metal base to form a non-conductive member at the at least a portion of the metal base. Cutting the metal base corresponding to the at least a portion of the metal base to form at least one gap, the non-conductive member being formed on a bottom of the gap. Placing one dielectric member in one corresponding gap.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of making a housing comprising:
providing a metal base, the metal base having an internal surface; placing the metal base into a mold, liquid non-conductive material covering at least a portion of the internal surface of the metal base to form a non-conductive member at the at least a portion of the metal base; cutting the metal base corresponding to the at least a portion of the metal base to form at least one gap, the non-conductive member being formed on a bottom of the gap; and placing one dielectric member in one corresponding gap.
2 . The method of claim 1 , wherein the method of making the housing further comprises a step of thinning the thickness of at least a portion of the metal base by a thinning process before the forming of the non-conductive member to form a groove at the internal surface of the metal base, the non-conductive member is received in the groove.
3 . The method of claim 1 , wherein the method of making the housing further includes a step of forming a protective layer on the metal base by a surface treating process after the forming the dielectric member, the dielectric layer has a thickness of 10 μm to 15 μm.
4 . The method of claim 1 , wherein the dielectric member is connected with the non-conductive member.
5 . The method of claim 1 , wherein each gap has a width of 0.02 mm to 0.7 mm along a direction from an adjacent dielectric member located at one side of a metal sheet to another adjacent dielectric member located at an opposite side of the metal sheet.
6 . The method of claim 1 , wherein each dielectric member has a width of 0.02 mm to 0.7 mm along a direction from an adjacent non-conductive member located at one side of a metal sheet to another adjacent non-conductive member located at an opposite side of the metal sheet.
7 . The method of claim 1 , wherein each metal sheet has a width of 0.15 mm to 1.0 mm along a direction from an adjacent non-conductive member located at one side of a metal sheet to another adjacent non-conductive member located at an opposite side of the metal sheet.
8 . The method of claim 1 , wherein a thickness of the metal base corresponding to the groove is 0.3 mm to 0.5 mm.
9 . The method of claim 1 , wherein the dielectric member is made of one of a resin, a rubber, and a ceramic.
10 . The method of claim 1 , wherein the metal base is made of the material selected from a group consisting of aluminium, aluminium alloy, magnesium, magnesium alloy, titanium, titanium alloy, copper and copper alloy.
11 . The method of claim 1 , wherein the non-conductive member is selected from a group consisting of polybutylene terephthalate, polyphenylene sulfide, polyethylene terephthalate, polyether ether ketone, polycarbonate, polyvinyl chloride polymer, polyurethane resin, epoxy, and polyurea resin.Join the waitlist — get patent alerts
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