Semiconductor device and method of manufacturing semiconductor device

Abstract

A method of manufacturing the semiconductor device includes forming a first gate member on a semiconductor substrate through a gate insulating film, forming a spacer on the first gate member, flattening a surface of the spacer, forming a first gate by partially etching the first gate member using the spacer as a mask, forming a second gate member so as to cover the first gate and the spacer having the flattened surface, forming a first insulating film on a surface of the second gate member, and forming a second gate by causing the second gate member to retreat while removing the first insulating film by etching, and the corresponding semiconductor device.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a semiconductor substrate;   a first gate that is provided on the semiconductor substrate through a gate insulating film;   a spacer that is provided on the first gate and has a flattened surface;   a second gate that is provided on the semiconductor substrate and adjacent to the first gate and the spacer;   a source and a drain that are provided at positions between which the first gate and the second gate are interposed;   a source wiring that is electrically connected to the source; and   a metal compound layer that is provided on each of an upper surface of the second gate, an upper surface of the source wiring, and an upper surface of the drain.   
     
     
         2 . The semiconductor device according to  claim 1 ,
 wherein the flattened surface of the first gate is substantially parallel to the principal plane of the semiconductor substrate.